2SK2399
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
−π−MOSV)
2
2SK2399
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Enhancement mode
: R
DS (ON)
= 0.17
Ω
(typ.)
: |Y
fs
| = 4.5 S (typ.)
Unit: mm
Low leakage current : I
DSS
= 100 µA (max) (V
DS
= 100 V)
: V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
100
100
±20
5
20
20
180
5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-64
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
6.25
125
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 11.6 mH, R
G
= 25
Ω,
I
AR
= 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Weight: 0.36 g (typ.)
1
2004-07-06
2SK2399
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
80 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 100 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 4 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
V
DS
= 10 V, I
D
= 2.5 A
Min
—
—
100
0.8
—
—
2.0
—
—
—
—
Typ.
—
—
—
—
0.22
0.17
4.5
500
80
190
17
Max
±10
100
—
2.0
0.30
0.23
—
—
—
—
—
pF
Unit
µA
µA
V
V
Ω
S
Turn−on time
Switching time
Fall time
—
25
—
ns
—
50
—
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
—
—
—
—
195
22
15
7
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 5 A, V
GS
= 0 V
I
DR
= 5 A, V
GS
= 0 V, dI
DR
/ dt = 50 A / µs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
160
0.28
Max
5
20
−1.7
—
—
Unit
A
A
V
ns
µC
Marking
K2399
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-06
京公网安备 11010802033920号
EEWORLD
