Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1624 2SC1625
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SA814/815
·High
breakdown voltage
APPLICATIONS
·Medium
power amplifier applications
·Driver
stage amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SC1624
V
CBO
Collector-base voltage
2SC1625
2SC1624
V
CEO
Collector-emitter voltage
2SC1625
V
EBO
I
C
I
E
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
100
5
1
-1
15
150
-55~150
V
A
A
W
℃
℃
Open emitter
100
120
V
CONDITIONS
VALUE
120
V
UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SC1624
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC1625
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
E
=1mA ;I
C
=0
I
C
=500mA; I
B
=50m A
I
C
=500mA ; V
CE
=5V
V
CB
=50V;I
E
=0
V
EB
=5V; I
C
=0
I
C
=150mA ; V
CE
=5V
I
C
=500mA ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1MHz
I
C
=150mA ; V
CE
=5V
I
C
=10mA; I
B
=0
CONDITIONS
2SC1624 2SC1625
MIN
120
TYP.
MAX
UNIT
V
100
5
0.5
1.0
1.0
1.0
70
40
20
30
pF
MHz
240
V
V
V
μA
μA
h
FE-1
Classifications
O
70-140
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1624 2SC1625
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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