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2SK3387(TE24L)

Description
TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,18A I(D),SMT
CategoryDiscrete semiconductor    The transistor   
File Size207KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SK3387(TE24L) Overview

TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,18A I(D),SMT

2SK3387(TE24L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)18 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
2SK3387
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
-F-MOSV)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
·
·
·
·
·
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.08
Ω(typ.)
High forward transfer admittance:
ïY
fs
ï
=
17
S (typ.)
Low leakage current: I
DSS
=
100
µA (V
DS
=
150
V)
Enhancement-mode: V
th
= 0.8~2.0 V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse (Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
150
150
±20
18
54
100
176
18
10
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.25
Unit
°C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
=
50 V, T
ch
=
25°C (initial), L
=
800
mH,
R
G
=
25
W,
I
AR
=
18 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2
3
1
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