2SK2493
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2493
Chopper Regulator and DC−DC Converter Applications
2.5-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.08 mΩ (typ.)
1.2 MAX.
5.5
±
0.2
9.5
±
0.3
5.2
±
0.2
1.5
±
0.2
6.5
±
0.2
Unit: mm
0.6 MAX.
: |Y
fs
| = 8.0 S (typ.)
: I
DSS
= 100
μA
(max) (V
DS
= 16 V)
: V
th
= 0.5 to 1.1 V (V
DS
= 10 V, I
D
= 1 mA)
1.1
±
0.2
0.6 MAX.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
16
16
±8
5
20
20
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
0.8 MAX.
0.6
±
0.15
1
2
1.05 MAX.
3
2.3
±
0.2
2.3
±
0.15 2.3
±
0.15
0.1
±
0.1
2
1
Pulse (Note 1)
GATE
DRAIN
（HEAT
SINK）
3. SOURSE
1.
2.
3
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
Weight: 0.36 g (typ.)
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
6.25
125
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2010-02-05
2SK2493
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
16 V, V
GS
= 5 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±6.5 V, V
DS
= 0 V
V
DS
= 16 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 2.5 V, I
D
= 2.5 A
V
GS
= 4 V, I
D
= 2.5 A
V
DS
= 10 V, I
D
= 2.5 A
Min
—
—
16
0.5
—
—
4.0
—
—
—
—
Typ.
—
—
—
—
0.08
0.07
8.0
1200
110
380
30
Max
±10
100
—
1.1
0.12
0.1
—
—
—
—
—
pF
Unit
μA
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
—
50
—
ns
—
200
—
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
—
—
—
—
650
23
17
6
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 5 A, V
GS
= 0 V
I
DR
= 5 A, V
GS
= 0 V
dI
DR
/ dt = 50 A
μs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
120
0.12
Max
5
20
−1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 2 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K2493
Part No.
(or abbreviation code)
Lot No.
Note 2
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2010-02-05
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