RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, TO-72, 4 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-72 |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Contacts | 4 |
| Reach Compliance Code | unknow |
| Configuration | SINGLE |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 2 pF |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
