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2SA1382(TPE6)

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-92VAR
CategoryDiscrete semiconductor    The transistor   
File Size170KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA1382(TPE6) Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-92VAR

2SA1382(TPE6) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)150
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.9 W
surface mountNO
Base Number Matches1
2SA1382
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1382
Power Amplifier Applications
High-Speed Switching Applications
Unit: mm
High DC current gain: h
FE
= 150 to 400 (I
C
=
−0.5
A)
Low collector saturation voltage: V
CE (sat)
=
−0.5
V (max) (I
C
=
−1
A)
High-speed switching: t
stg
= 1.0
μs
(typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Peak
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−50
−50
−7
−2
−4
−1
900
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21

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