2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
−π−MOSV)
2
2SJ377
5.2
±
0.2
1.5
±
0.2
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.16
Ω
(typ.)
1.2 MAX.
Unit: mm
6.5
±
0.2
0.6 MAX.
: I
DSS
=
−100 μA
(max) (V
DS
=
−60
V)
: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
9.5
±
0.3
: |Y
fs
| = 4.0 S (typ.)
5.5
±
0.2
1.1
±
0.2
0.6 MAX.
0.8 MAX.
2.3
±
0.2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−60
−60
±20
−5
−20
20
273
−5
2
150
−55
to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
0.6
±
0.15
1
2
1.05 MAX.
3
2.3
±
0.15 2.3
±
0.15
0.1
±
0.1
2
1
Pulse (Note 1)
GATE
DRAIN
（HEAT
SINK）
3. SOURSE
1.
2.
3
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
6.25
125
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
−25
V, T
ch
= 25°C (initial), L = 14.84 mH, R
G
= 25
Ω,
I
AR
=
−5
A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05
2SJ377
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−60
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−2.5
A
V
GS
=
−10
V, I
D
=
−2.5
A
V
DS
=
−10
V, I
D
=
−2.5
A
Min
—
—
−60
−0.8
—
—
2.0
—
—
—
—
Typ.
—
—
—
—
0.24
0.16
4.0
630
95
290
25
Max
±10
−100
—
−2.0
0.28
0.19
—
—
—
—
—
pF
Unit
μA
μA
V
V
Ω
S
Turn-on time
Switching time
Fall time
t
on
—
45
—
ns
t
f
—
55
—
Turn-off time
Total gate charge (Gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −48
V, V
GS
=
−10
V, I
D
=
−5
A
—
—
—
—
200
22
16
6
—
—
—
—
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Qrr
Test Condition
—
—
I
DR
=
−5
A, V
GS
= 0 V
I
DR
=
−5
A, V
GS
= 0 V
dl
DR
/ dt = 50 A /
μS
Min
—
—
—
—
—
Typ.
—
—
—
80
0.1
Max
−5
−20
1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
J377
Part No.
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2010-02-05
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