Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1589
DESCRIPTION
・With
TO-220Fa package
・DARLINGTON
・Complement
to type 2SB1098
・Low
speed switching
APPLICATIONS
・Low
frequency power amplifier
・Low
speed switching industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
固电
导½
半
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
ANG
MIC
E SE
Open emitter
Open base
CONDITIONS
OR
CT
NDU
O
VALUE
150
100
7
5
8
0.5
UNIT
V
V
V
A
A
A
Open collector
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.5
W
20
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD1589
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A , I
B
=0
60
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
I
C
=3A ;I
B
=3mA
I
C
=3A; I
B
=3mA
1.5
V
Base-emitter saturation voltage
2.0
V
μA
I
CBO
Collector cut-off current
V
CB
=100V ;I
E
=0
1
h
FE-1
DC current gain
I
C
=3A ; V
CE
=2V
2000
15000
h
FE-2
DC current gain
I
C
=5A ; V
CE
=2V
500
Switching times
t
on
t
s
t
f
Turn-on time
固电
Fall time
Storage time
导½
半
h
FE
Classifications
R
2000-5000
O
ANG
CH
IN
Y
3000-7000
MIC
E SE
I
C
=3A ;I
B1
=3mA
I
B2
=-3mA; V
CC
≈50V
R
L
=16.7Ω
OR
CT
NDU
O
1.0
3.5
1.2
μs
μs
μs
5000-15000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1589
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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