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2SA1384O

Description
TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size188KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1384O Overview

TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

2SA1384O Parametric

Parameter NameAttribute value
Parts packaging codeSC-62
package instructionROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN
Contacts3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceNOT SPECIFIED
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Base Number Matches1
2SA1384
TOSHIBA Transistor
Silicon PNP Triple Diffused Type (PCT process)
2SA1384
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: V
CBO
=
−300
V, V
CEO
=
−300
V
Low saturation voltage: V
CE (sat)
=
−0.5
V (max)
Small collector output capacitance: C
ob
= 6 pF (typ.)
Complementary to 2SC3515
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
−300
−300
−8
−100
−20
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
Weight: 0.05 g (typ.)
°C
°C
Note 1: 2SA1384 mounted on a ceramic substrate (250 mm
2
× 0.8 mm t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-01-24

2SA1384O Related Products

2SA1384O 2SA1384R
Description TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
Parts packaging code SC-62 SC-62
package instruction ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 300 V 300 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 30
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 70 MHz 70 MHz
Base Number Matches 1 1
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