2SK3625
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3625
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Low drain−source ON resistance: R
DS (ON)
= 65 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 10 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 200 V)
Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
200
200
±30
25
100
100
488
25
10
150
−55
to150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
―
―
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
1.25
83.3
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD =
50 V, T
ch
= 25°C (initial), L = 1.26 mH, R
G
= 25
Ω,
I
AR
= 25 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
―
―
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29
2SK3625
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
tr
10 V
0V
4.7Ω
Fall time
t
f
V
DD
∼
100V
−
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
160 V, V
GS
= 10 V, I
D
= 25 A
Duty
≤
1%, t
w
=
10
μs
—
—
—
—
40
44
21
23
—
—
—
—
nC
—
10
—
I
D
=
12.5 A
V
OUT
R
L
=
8
Ω
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±25 V, V
DS
= 0 V
V
DS
= 200 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 12.5 A
V
DS
= 10 V, I
D
= 12.5A
Min
—
—
200
3.0
—
5
—
—
—
—
Typ.
—
—
—
—
65
10
2080
280
1060
20
Max
±10
100
—
5.0
82
—
—
—
—
—
pF
Unit
μA
μA
V
V
½Ω
S
V
GS
Turn−on time
Switching time
t
on
—
40
—
ns
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 25 A, V
GS
= 0 V
I
DR
= 25 A, V
GS
= 0 V
dI
DR
/ dt
=
100 A /
μs
Min
—
—
—
—
—
Typ.
—
—
—
290
2.2
Max
25
100
−1.5
—
—
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3625
Part No. (or abbreviation code)
Lot No.
Note 4
2
2009-09-29
2SK3625
I
D
– V
DS
50
Common
source
40 Tc
=
25°C
Pulse test
30
9
80
15
10
100
9.5
Common source
Tc
=
25°C
Pulse test
I
D
– V
DS
15
12
11
Drain current I
D
(A)
Drain current I
D
(A)
8.5
60
10
20
8
7.5
40
9
10
7
VGS
=
6.5 V
20
8
VGS
=
7 V
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
50
Common source
VDS
=
10 V
Pulse test
4
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse test
3
40
Drain current I
D
(A)
Drain-source voltage
30
Tc
= −55°C
20
100
10
25
0
0
V
DS
(V)
2
ID
=
25 A
1
12
6
4
8
12
16
20
0
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y
fs
⎪
– I
D
100
Common source
VDS
=
10 V
Pulse test
1000
Common source
Tc
=
25°C
Pulse test
R
DS (ON)
– I
D
Forward transfer admittance
⎪Y
fs
⎪
(S)
Tc
= −55°C
10
100
25
Drain-source on resistance
R
DS (ON)
(mΩ)
100
VGS
=
10 V
15
1
1
10
100
10
1
10
100
Drain current I
D
(A)
Drain current I
D
(A)
3
2009-09-29
2SK3625
R
DS (ON)
– Tc
(mΩ)
160
Common source
VGS
=
10 V
120
Pulse test
12
6
100
Common source
Tc
=
25°C
I
DR
– V
DS
Drain-source on resistance R
DS (ON)
(A)
Pulse test
10
ID
=
25 A
80
Drain reverse current I
DR
10
1
5
40
3
1
VGS
=
0 V
−0.8
−1.0
−1.2
−1.4
−1.6
0
−80
−40
0
40
80
120
160
0.1
0
−0.2
−0.4
−0.6
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
10000
6
V
th
– Tc
V
th
(V)
Gate threshold voltage
5
Ciss
(pF)
1000
Coss
4
Capacitance C
3
2
Common source
1 V
DS
=
10 V
ID
=
1 mA
Pulse test
0
−80
−40
0
100
Common source
VGS
=
0 V
f
=
1 MHz
10
0.1
Tc
=
25°C
1
10
Crss
40
80
120
160
100
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
P
D
– Tc
200
200
Dynamic input/output characteristics
20
Common source
ID
=
25 A
Tc
=
25°C
Pulse test
VDS
=
40 V
120
160
80
VGS
8
80
12
Drain power dissipation P
D
(W)
V
DS
(V)
160
160
16
Drain-source voltage
80
40
40
4
10
0
40
80
120
160
200
0
0
20
40
60
80
0
100
Case temperature Tc (°C)
Total gate charge Q
g
(nC)
4
2009-09-29
Gate-source voltage
120
V
GS
(V)
VDS
2SK3625
Safe operating area
1000
500
E
AS
– T
ch
Avalanche energy EAS (mJ)
400
100
ID max (pulsed)
*
100
μs*
ID max (continuous)
1 ms*
300
(A)
Drain current ID
200
10
DC operation
Tc
=
25°C
100
0
25
1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated linearly
with increase in temperature.
0.1
1
10
100
VDSS max
1000
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
2
−
VDD
⎟
⎝
VDSS
⎠
Drain-source voltage
V
DS
(V)
Test circuit
R
G
=
25
Ω
V
DD
=
50 V, L
=
1.26 mH
5
2009-09-29
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