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2SD1590M

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size236KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SD1590M Overview

Transistor

2SD1590M Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1590
DESCRIPTION
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 1.5V(Max) @I
C
= 3A
·High
DC Current Gain
: h
FE
= 2000(Min) @ I
C
= 3A
·Complement
to Type 2SB1099
APPLICATIONS
·Designed
for audio frequency power amplifier and low
speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
I
CP
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
150
V
100
V
7
V
8
A
12
A
0.8
A
2
W
Collector Current-Pulse
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
25
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

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Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1
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