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“Standard”:
2.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ128-Z
P-CHANNEL SILICON POWER MOS FET
FOR HIGH SPEED SWITCHING
<R>
FEATURES
• Suitable for switching power supplies, actuator controls, and pulse circuits.
• Low R
DS(on)
• No second breakdown
• 4 V gate drive (Logic level)
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
5.5 ±0.2
1.5
−0.1
+0.2
Note
5.6 ±0.3
9.5 ±0.5
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
• Designed for Hybrid Integrated Circuits
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current (DC)
Peak Drain Current (pulse)
Note 1
1 2 3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
Note 2
−100
m20
m2
m8
20
2.0
150
−55
to +150
V
V
A
A
W
W
°C
°C
TO-252 (MP-3Z)
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
2.3 ±0.3
0.15 ±0.15
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
1.
2.
3.
4.
Gate
Drain
Source
Drain Fin
Notes 1.
PW
≤
300
μ
s, Duty Cycle
≤
10%
2.
When mounted on ceramic substrate of 2.5 cm
2
× 0.7 mm
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18294EJ3V0DS00 (3rd edition)
(Previous No. TC-1813)
Date Published July 2006 NS CP(K)
Printed in Japan
1986, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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