Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1217
DESCRIPTION
·With
TO-126 package
·Complement
to type 2SC2877
·Good
linearity of h
FE
APPLICATIONS
·Audio
frequency power amplifier
·Low
speed switching
·Suitable
for output stage of 5 watts
car radio and car stereo
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-40
-40
-5
-3
-1
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
D
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-2.0A; I
B
=-0.2A
I
C
=-0.5A ; V
CE
=-2V
V
CB
=-40V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-2.5A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-2V
f=1MHz ; V
CB
=-10V;I
E
=0
80
25
MIN
-40
2SA1217
TYP.
MAX
UNIT
V
-0.8
-1.0
-0.1
-0.1
240
V
V
μA
μA
100
35
MHz
pF
h
FE-1
Classifications
O
80-160
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1217
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1217
4