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2SC2884-O(TE12L,F)

Description
TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SOT-89
CategoryDiscrete semiconductor    The transistor   
File Size127KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SC2884-O(TE12L,F) Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SOT-89

2SC2884-O(TE12L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
surface mountYES
Base Number Matches1
2SC2884
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2884
Audio Frequency Amplifier Applications
High DC current gain: h
FE
= 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1204
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
35
30
5
800
160
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
SC-62
2-5K1A
°C
°C
TOSHIBA
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

2SC2884-O(TE12L,F) Related Products

2SC2884-O(TE12L,F) 2SC2884-O(TE12L)
Description TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SOT-89 TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SOT-89
Is it Rohs certified? conform to incompatible
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.8 A 0.8 A
Configuration Single Single
Minimum DC current gain (hFE) 100 100
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W
surface mount YES YES
Base Number Matches 1 1
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