2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
•
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
•
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Blocking Voltage to 800 Volts
•
300 A Surge Current Capability
•
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
*Peak Repetitive Off–State Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
T
J
= 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
On-State RMS Current
(180° Conduction Angles; T
C
= 85°C)
Average On-State Current
(180° Conduction Angles; T
C
= 85°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 100°C)
Forward Peak Gate Power
(Pulse Width
≤
1.0
µs,
T
C
= 85°C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 85°C)
Forward Peak Gate Current
(Pulse Width
≤
1.0
µs,
T
C
= 85°C)
Operating Junction Temperature Range
Storage Temperature Range
*Indicates JEDEC Registered Data
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Symbol
V
DRM,
V
RRM
50
100
400
600
800
I
T(RMS)
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
25
16
250
20
0.5
2.0
–40 to
+125
–40 to
+150
A
A
A
Watts
1
Watts
A
°C
2
3
4
1
2
3
x
= 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
Value
Unit
Volts
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO–220AB
CASE 221A
STYLE 3
YY WW
650x
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
°C
Device
2N6504
2N6505
2N6507
2N6508
2N6509
Package
TO220AB
TO220AB
TO220AB
TO220AB
TO220AB
Shipping
500/Box
500/Box
500/Box
500/Box
500/Box
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 4
Publication Order Number:
2N6504/D
2N6504 Series
*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
θJC
T
L
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
I
DRM
, I
RRM
T
J
= 25°C
T
J
= 125°C
–
–
–
–
10
2.0
µA
mA
ON CHARACTERISTICS
*Forward On–State Voltage (Note 2.)
(I
TM
= 50 A)
*Gate Trigger Current (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 Ohms)
*Gate Trigger Voltage (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
C
= –40°C)
Gate Non-Trigger Voltage
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
J
= 125°C)
*Holding Current
(V
AK
= 12 Vdc, Initiating Current = 200 mA,
Gate Open)
*Turn-On Time
(I
TM
= 25 A, I
GT
= 50 mAdc)
Turn-Off Time (V
DRM
= rated voltage)
(I
TM
= 25 A, I
R
= 25 A)
(I
TM
= 25 A, I
R
= 25 A, T
J
= 125°C)
T
C
= 25°C
T
C
= –40°C
t
gt
t
q
–
–
15
35
–
–
T
C
= 25°C
T
C
= –40°C
V
TM
I
GT
V
GT
V
GD
I
H
–
–
–
–
0.2
–
–
–
–
9.0
–
1.0
–
18
–
1.5
1.8
30
75
1.5
–
40
80
2.0
µs
µs
Volts
mA
Volts
Volts
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
dv/dt
–
50
–
V/µs
http://onsemi.com
2
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
TC , MAXIMUM CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER (WATTS)
13
0
12
0
110
10
0
90
80
α
α
= CONDUCTION ANGLE
32
α
α
= CONDUCTION ANGLE 60°
α
= 30°
180°
90°
dc
24
16
T
J
= 125°C
α
= 30°
60°
90°
180°
dc
8.0
0
8.0
12
16
I
T(AV)
, ON STATE FORWARD CURRENT (AMPS)
4.0
20
0
0
4.0
8.0
12
16
I
T(AV)
, AVERAGE ON STATE FORWARD CURRENT (AMPS)
20
Figure 1. Average Current Derating
Figure 2. Maximum On–State Power Dissipation
http://onsemi.com
3
2N6504 Series
100
70
50
30
125°C
20
iF , INSTANTANEOUS FORWARD CURRENT (AMPS)
25°C
10
7.0
5.0
3.0
2.0
300
I TSM , PEAK SURGE CURRENT (AMP)
1 CYCLE
275
250
225
T
C
= 85°C
f = 60 Hz
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
2.0
3.0
4.0
6.0
8.0
10
NUMBER OF CYCLES
1.0
0.7
0.5
0.3
0.2
200
175
1.0
0.1
0
0.4
0.8
1.2
1.6
2.0
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
2.4
2.8
Figure 3. Typical On–State Characteristics
Figure 4. Maximum Non–Repetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
t, TIME (ms)
100
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
Z
θJC(t)
= R
θJC
•
r(t)
Figure 5. Thermal Response
http://onsemi.com
4
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
100
VGT, GATE TRIGGER VOLTAGE (VOLTS)
-10
5
20
35
50 65
80
T
J
, JUNCTION TEMPERATURE (°C)
95
110 125
I GT, GATE TRIGGER CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10
5
20
35
50
65
80
95
110 125
10
1
-40 -25
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
100
IH , HOLDING CURRENT (mA)
10
1
-40 -25 -10
5
20
35
50
65
80
95
110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current
versus Junction Temperature
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
