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2SK365-GR

Description
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size680KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SK365-GR Overview

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

2SK365-GR Parametric

Parameter NameAttribute value
package instruction2-4E1C, 3 PIN
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
FET technologyJUNCTION
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK365
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: V
GDS
=
−50
V
High input impedance: I
GSS
=
−1.0
nA (max) (V
GS
=
−30
V)
Low R
DS (ON)
: R
DS (ON)
= 80
(typ.) (I
DSS
= 5 mA)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−50
10
200
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-4E1C
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note 1)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
R
DS (ON)
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz (Note 2)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DG
=
10 V, I
D
=
0, f
=
1 MHz
V
DS
=
10 mV, V
GS
=
0
(Note 2)
Min
−50
1.2
−0.25
5.0
Typ.
19
13
3
80
Max
−1.0
14
−1.5
Unit
nA
V
mA
V
mS
pF
pF
Ω
Note 1: I
DSS
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Note 2: Condition of the typical value I
DSS
=
5 mA
1
2007-11-01

2SK365-GR Related Products

2SK365-GR 2SK365-BL 2SK365-Y
Description TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal
package instruction 2-4E1C, 3 PIN 2-4E1C, 3 PIN 2-4E1C, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
Configuration SINGLE SINGLE SINGLE
FET technology JUNCTION JUNCTION JUNCTION
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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