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2SA1020-O

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size364KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric Compare View All

2SA1020-O Overview

Small Signal Bipolar Transistor,

2SA1020-O Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
ECCN codeEAR99
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA1020-O
2SA1020-Y
Features
Collector of 0.9Watts of Power Dissipation.
Collector-current -2.0A
Operating and storage junction temperature range: -55 to +150
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100mAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-50Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-0.5Adc, V
CE
=-2.0Vdc)
DC Current Gain
(I
C
=-1.5Adc, V
CE
=-2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-1Adc, I
B
=-50mAdc)
Base-Emitter Saturation Voltage
(I
C
=-1.0Adc,
I
B
=-50mA)
Transistor Frequency
(I
C
=-500mAdc, V
CE
=-2.0Vdc,)
Coll ector output capacitance
(I
E
=0, V
CB
=-10Vdc,f=1MHz)
Turn-0n time
(I
B1
=-I
B2
=-0.05,
V
CC
=-30Vdc,I
C
=-1Adc)
Storage time
(I
B1
=-I
B2
=-0.05,
V
CC
=-30Vdc,I
C
=-1Adc)
Fall time
(I
B1
=-I
B2
=-0.05,
V
CC
=-30Vdc,I
C
=-1Adc)
Min
-50
-50
-5.0
---
---
70
40
---
---
Max
---
---
---
-1.0
-1.0
240
---
-0.5
-1.2
100(Typ)
40(Typ)
0.1(Typ)
1.0(Typ)
0.1(Typ)
Units
Vdc
Vdc
Vdc
uAdc
uAdc
---
---
Vdc
Vdc
MHz
pF
PNP
Plastic-Encapsulate
Transistor
TO-92MOD
A
L
B
G
C
F
M
H
K
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
ts
tf
J
E
us
us
us
DIM
A
B
C
D
E
F
G
H
J
K
L
M
INCHES
MIN
.228
.331
.016
.114
.059
.543
.035
.157
.185
----
.016
.068
DIMENSIONS
D
1. EMITTER
2. COLLECTOR
3. BASE
CLASSIFICATION OF H
FE (1)
Rank
Range
O
70-140
Y
120-240
MAX
.
244
.
346
.
024
.
122
.
559
.
043
-----
.
201
.
063
.
020
.
080
MM
MIN
5.80
8.40
0.40
2.90
1.50
13.80
0.90
4.00
4.70
-----
0.40
1.73
MAX
6.20
8.80
0.60
3.10
14.20
1.10
---
5.10
1.60
0.50
2.03
NOTE
www.mccsemi.com
Revision:
A
1 of 2
2012/02/07

2SA1020-O Related Products

2SA1020-O 2SA1020-Y
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Base Number Matches 1 1

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