Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
·
2SD1049
DESCRIPTION
・With
TO-3PN package
・High
current,
・High
speed switching
・High
reliability
APPLICATIONS
・Switching
regulators
・Motor
controls
・High
frequency inverters
・General
purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
固电
导½
半
Fig.1 simplified outline (TO-3PN) and symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
ANG
CH
IN
Open emitter
SEM
E
CONDITIONS
ON
IC
OR
DUT
VALUE
120
80
7
25
5
UNIT
V
V
V
A
A
W
℃
℃
Open base
Open collector
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
80
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
1.55
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1049
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=0.1mA ;I
E
=0
I
E
=0.1mA ;I
C
=0
I
C
=25A; I
B
=2.5A
I
C
=25A ;I
B
=2.5A
V
CB
=120V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=25A ; V
CE
=5V
20
MIN
80
120
7
1.5
2.0
0.1
0.1
TYP.
MAX
UNIT
V
V
V
V
V
mA
mA
Switching times
t
on
t
stg
t
f
固电
Fall time
Turn-on time
导½
半
Storage time
HAN
INC
SEM
GE
I
C
=25A I
B1
=-I
B2
=2.5A
R
L
=3Ω;P
W
=20μs;
Duty≤2%
ON
IC
OR
DUT
1.0
2.5
0.4
μs
μs
μs
2
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