EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK3847(2-10S1B)

Description
TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size315KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SK3847(2-10S1B) Overview

TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power

2SK3847(2-10S1B) Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)47 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)32 A
Maximum drain-source on-resistance0.026 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)96 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
2SK3847
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Low drain-source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 12 mΩ (typ.)
: |Y
fs
| = 36 S (typ.)
Unit: mm
: I
DSS
= 100
μA
(max) (V
DS
= 40 V)
: V
th
= 1.5 to 2.5 V
(V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
40
40
±20
32
96
30
47
32
3
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-10S1B
Drain power dissipation (Tc=25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
4.17
83.3
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 48
μH,
R
G
= 25
Ω,
I
AR
= 32 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29

2SK3847(2-10S1B) Related Products

2SK3847(2-10S1B) 2SK3847(2-10S2B)
Description TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power TRANSISTOR 32 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 47 mJ 47 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V 40 V
Maximum drain current (ID) 32 A 32 A
Maximum drain-source on-resistance 0.026 Ω 0.026 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 96 A 96 A
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
Exploring High Voltage Transmission – Part 2: Voltage Source Converters
[font=normal 宋体, Arial, Helvetica, sans-serif][color=#000000][size=12px]Exploring High Voltage Transmission - Part 2: Voltage Source Converter[/size][/color][/font] [font=normal 宋体, Arial, Helvetica, ...
okhxyyo Analogue and Mixed Signal
About the ADC driver I wrote
This driver is modified based on the ADC driver of mini2440. Function: Each read operation continuously reads 100 groups of ADC values and returns them.Test problem: After the module is loaded onto th...
sphshine ARM Technology
About the Design of Digital Filter
Dear seniors, I want to design a low-pass filter. The input code rate is 50bps. I designed one before with a sampling rate of 2k, which means one code sampled 40 points. But the effect was not good, a...
dengqiang1 FPGA/CPLD
Three typical connections between AT89S51 microcontroller and ADC0809 analog-to-digital converter
Three typical connections between AT89S51 microcontroller and ADC0809 analog-to-digital converter...
tianyueyou 51mcu
yuv,ycbcr,ypbpr,yiq itu-r bt.656 itu-r bt.601
[Top] yuv,ycbcr,ypbpr,yiq itu-r bt.656 itu-r bt.601Category: Computer Basics2009-09-23 19:01 1727 people read Comments (1) Save ReportYUV is a color encoding method.YUV is a type of true-color color s...
zhouning201 Industrial Control Electronics
【allegro】How do PCB lines move with components?
As the title says, if you want the PCB lines to move with the components when drawing PCB in Allegro, how can you set it up? ? ?...
木犯001号 PCB Design

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 424  1381  572  2897  1203  9  28  12  59  25 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号