tSs.mi-CondiLcto'i ^Pioaueti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-89fin
Silicon PNP Power Transistor
2SA634
DESCRIPTION
• High Collector Current l
c
= -3A
• Collector-Emitter Breakdown Voltage-
: V
(B
R)CEo= -SOV(Min)
• Good Linearity of h
FE
• Complement to Type 2SC1096
PIN 1.BASE
2.COLLECTOR
3. EMITTER
APPLICATIONS
• Designed for output stages of 3~5 watts car radio sets and
car stereo applications.
TO-220C package
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
Ma
A
f
•«
3
-* }
r
I_
=k
'
1-r
•fl
.\r
1
-»
*S
T
VCBO
Collector-Base Voltage
-40
V
1
H
T~
K
VCEO
Collector-Emitter Voltage
-30
V
T
VEBO
Emitter-Base Voltage
-5
V
f
/•**"
H <
> h
mm
DIM
MIN
"1
Rr
Ic
Collector Current-Continuous
-3
A
c~|
A
ICP
Collector Current-Peak
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25"C
-0.6
A
10
W
A
B
C
D
F
G
H
J
K
L
15.50
PT
Collector Power Dissipation
@T
g
=25°C
Tj
Junction Temperature
1.2
9.00
4.20
0.70
3.40
4.98
2.68
0.44
13.00
1.20
MAX
15.90
10.20
4.50
0.90
3.70
5.18
2.90
0.60
13.40
1.45
150
'C
Q
R
S
T
stg
Storage Temperature Range
-55-150
'C
u
V
2.70
2.30
1.29
6.45
8.66
2.90
2.70
1.35
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
10 press. I louever, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. "
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA634
TYP.
MAX
UNIT
VcE(sat)
Collector-Emitter Saturation Voltage
l
c
= -3A; I
B
= -0.3A
-2.0
V
VeE(sat)
Base-Emitter Saturation Voltage
l
c
= -3A; I
B
= -0.3A
-2.0
V
ICBO
Collector Cutoff Current
V
CB
= -30V; I
E
= 0
-1.0
u A
IEBO
Emitter Cutoff Current
VEB= -3V; l
c
= 0
-1.0
uA
hpE-1
DC Current Gain
lc= -20mA; V
CE
= -5V
20
hFE-2
DC Current Gain
lc=-1A;V
C
E=-5V
40
250
fr
Current-Gain— Bandwidth Product
lc=-0.1A; VcE=-5V
55
MHz
COB
Output Capacitance
l
E
=0;Vc
B
=-10V, f=1MHz
75
PF
h
FE
_
2
Classifications
N
40-60
M
50-100
L
80-160
K
120-250
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