SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
New Product
Vishay Semiconductors
formerly General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AA (SMB)
Cathode Band
Stand-off Voltage
5.0 to 40V
Peak Pulse Power
1000W (unidirectional)
800W (bidirectional)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.085 MAX
(2.16 MAX)
0.012 (0.305)
0.006 (0.152)
0.180 (4.57)
0.160 (4.06)
0.086 MIN
(2.20 MIN)
0.060 MIN
(1.52 MIN)
0.220 REF
0.096 (2.44)
0.084 (2.13)
Dimensions in inches
and (millimeters)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008
(0.203)
Max.
Mechanical Data
Case:
JEDEC DO-214AA molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.003oz., 0.093g
Features
• 1000W for unidirectional and 800W for bidirectional
peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance,
excellent clamping capability
• Very fast response time
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMB8J10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1,2)
(see fig. 1)
unidirectional
bidirectional
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
1000
800
See Next Table
100
72
20
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88422
11-Mar-04
www.vishay.com
1
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Unidirectional
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
1AD
1AE
1AF
1AG
1AH
1AK
1AL
1AM
1AN
1AP
1AQ
1AR
1AS
1AT
1AU
1AV
1AW
1AX
1AY
1AZ
1BD
1BE
1BF
1BG
1BH
1BK
1BL
1BM
1BN
1BP
1BQ
1BR
1BS
1BT
1BU
1BV
1BW
1BX
1BY
1BZ
1CD
1CE
1CF
1CG
1CH
1CK
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
6.40
7.82
6.40
7.07
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
F
= 3.5V at I
F
= 50A (uni-directional only)
SMB10J5.0
SMB10J5.0A
SMB10J6.0
SMB10J6.0A
SMB10J6.5
SMB10J6.5A
SMB10J7.0
SMB10J7.0A
SMB10J7.5
SMB10J7.5A
SMB10J8.0
SMB10J8.0A
SMB10J8.5
SMB10J8.5A
SMB10J9.0
SMB10J9.0A
SMB10J10
SMB10J10A
SMB10J11
SMB10J11A
SMB10J12
SMB10J12A
SMB10J13
SMB10J13A
SMB10J14
SMB10J14A
SMB10J15
SMB10J15A
SMB10J16
SMB10J16A
SMB10J17
SMB10J17A
SMB10J18
SMB10J18A
SMB10J20
SMB10J20A
SMB10J22
SMB10J22A
SMB10J24
SMB10J24A
SMB10J26
SMB10J26A
SMB10J28
SMB10J28A
SMB10J30
SMB10J30A
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(A)
(2)
V
C
(V)
1000
104.2
9.6
1000
108.7
9.2
1000
87.7
11.4
1000
97.1
10.3
500
81.3
12.3
500
89.3
11.2
200
75.2
13.3
200
83.3
12.0
100
69.9
14.3
100
77.5
12.9
50
66.7
15.0
50
73.5
13.6
20
62.9
15.9
20
69.4
14.4
10
59.2
16.9
10
64.9
15.4
5.0
53.2
18.8
5.0
58.8
17.0
5.0
49.8
20.1
5.0
54.9
18.2
5.0
45.5
22.0
5.0
50.3
19.9
1.0
42.0
23.8
1.0
46.5
21.5
1.0
38.8
25.8
1.0
43.1
23.2
1.0
37.2
26.9
1.0
41.0
24.4
1.0
34.7
28.8
1.0
38.5
26.0
1.0
32.8
30.5
1.0
36.2
27.6
1.0
31.1
32.2
1.0
34.2
29.2
1.0
27.9
35.8
1.0
30.9
32.4
1.0
25.4
39.4
1.0
28.2
35.5
1.0
23.3
43.0
1.0
25.7
38.9
1.0
21.5
46.6
1.0
23.8
42.1
1.0
20.0
50.0
1.0
22.0
45.4
1.0
18.7
53.5
1.0
20.7
48.4
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88422
11-Mar-04
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Unidirectional
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
1CL
1CM
1CN
1CP
1CQ
1CR
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
F
= 3.5V at I
F
= 50A (uni-directional only)
SMB10J33
SMB10J33A
SMB10J36
SMB10J36A
SMB10J40
SMB10J40A
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(A)
(2)
V
C
(V)
1.0
16.9
59.0
1.0
18.8
53.3
1.0
15.6
64.3
1.0
17.2
58.1
1.0
14.0
71.4
1.0
15.5
64.5
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88422
11-Mar-04
www.vishay.com
3
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Bidirectional
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Device Type
Device
Marking
Code
1AD
1AE
1AF
1AG
1AH
1AK
1AL
1AM
1AN
1AP
1AQ
1AR
1AS
1AT
1AU
1AV
1AW
1AX
1AY
1AZ
1BD
1BE
1BF
1BG
1BH
1BK
1BL
1BM
1BN
1BP
1BQ
1BR
1BS
1BT
1BU
1BV
1BW
1BX
1BY
1BZ
1CD
1CE
1CF
1CG
1CH
1CK
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
6.40
7.82
6.40
7.25
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
2000
83.3
9.6
2000
87.0
9.2
2000
70.2
11.4
2000
77.7
10.3
1000
65.0
12.3
1000
71.4
11.2
400
60.2
13.3
400
66.7
12.0
200
55.9
14.3
200
62.0
12.9
100
53.3
15.0
100
58.8
13.6
40
50.3
15.9
40
55.6
14.4
20
47.3
16.9
20
51.9
15.4
10
42.6
18.8
10
47.1
17.0
5.0
39.8
20.1
5.0
44.0
18.2
5.0
36.4
22.0
5.0
40.2
19.9
1.0
33.6
23.8
1.0
37.2
21.5
1.0
31.0
25.8
1.0
34.5
23.2
1.0
29.7
26.9
1.0
32.8
24.4
1.0
27.8
28.8
1.0
30.8
26.0
1.0
26.2
30.5
1.0
29.0
27.6
1.0
24.8
32.2
1.0
27.4
29.2
1.0
22.3
35.8
1.0
24.7
32.4
1.0
20.3
39.4
1.0
22.5
35.5
1.0
18.6
43.0
1.0
20.6
38.9
1.0
17.2
46.6
1.0
19.0
42.1
1.0
16.0
50.0
1.0
17.6
45.4
1.0
15.0
53.5
1.0
16.5
48.4
SMB8J5.0C
SMB8J5.0CA
SMB8J6.0C
SMB8J6.0CA
SMB8J6.5C
SMB8J6.5CA
SMB8J7.0C
SMB8J7.0CA
SMB8J7.5C
SMB8J7.5CA
SMB8J8.0C
SMB8J8.0CA
SMB8J8.5C
SMB8J8.5CA
SMB8J9.0C
SMB8J9.0CA
SMB8J10C
SMB8J10CA
SMB8J11C
SMB8J11CA
SMB8J12C
SMB8J12CA
SMB8J13C
SMB8J13CA
SMB8J14C
SMB8J14CA
SMB8J15C
SMB8J15CA
SMB8J16C
SMB8J16CA
SMB8J17C
SMB8J17CA
SMB8J18C
SMB8J18CA
SMB8J20C
SMB8J20CA
SMB8J22C
SMB8J22CA
SMB8J24C
SMB8J24CA
SMB8J26C
SMB8J26CA
SMB8J28C
SMB8J28CA
SMB8J30C
SMB8J30CA
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
4
Document Number 88422
11-Mar-04
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Bidirectional
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Device Type
Device
Marking
Code
1CL
1CM
1CN
1CP
1CQ
1CR
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1.0
13.6
59.0
1.0
15.0
53.3
1.0
12.4
64.3
1.0
13.8
58.1
1.0
11.2
71.4
1.0
12.4
64.5
SMB8J33C
SMB8J33CA
SMB8J36C
SMB8J36CA
SMB8J40C
SMB8J40CA
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88422
11-Mar-04
www.vishay.com
5
Embedded System
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