FXT38CSTOA datasheet, PDF - EEWORLD Datasheet

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FXT38CSTOA: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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FXT38CSTOA Overview

Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

FXT38CSTOA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	10000
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.25 V

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NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 1 SEPT 93

FEATURES

* 60 Volt V

CEO

* Gain of 10K at I

C

=0.5 Amp

FXT38C

B

C

E

REFER TO BCX38 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

80

60

10

2

E-Line

TO92 Compatible

VALUE

UNIT

V

A

mA

W

°C

800

1

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

MIN.

80

60

10

100

1.25

1.8

5000

10000

TYP.

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=10

µ

A, I

E

=0

I

C

=10mA, I

B

=0

I

E

=10

µ

A, I

C

=0

V

CB

=60V, I

E

=0

V

EB

=8V, I

C

=0

I

C

=800mA, I

B

=8mA*

I

C

=800mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=500mA, V

CE

=5V*

3-29

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

V

CE(sat)

V

BE(on)

Static Forward Current h

FE

Transfer Ratio

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

FXT38CSTOA Related Products

	FXT38CSTOA	FXT38CSTZ	FXT38CSSTOB
Description	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Transistor
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3	,
Reach Compliance Code	unknown	unknown	unknown
JESD-609 code	e0	e0	e0
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
ECCN code	EAR99	EAR99	-
Maximum collector current (IC)	0.8 A	0.8 A	-
Collector-emitter maximum voltage	60 V	60 V	-
Configuration	DARLINGTON	DARLINGTON	-
Minimum DC current gain (hFE)	10000	10000	-
JESD-30 code	R-PSIP-W3	R-PSIP-W3	-
Number of components	1	1	-
Number of terminals	3	3	-
Maximum operating temperature	200 °C	200 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	IN-LINE	-
Polarity/channel type	NPN	NPN	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal form	WIRE	WIRE	-
Terminal location	SINGLE	SINGLE	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
VCEsat-Max	1.25 V	1.25 V	-

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