UN511FQ datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> UN511FQ

UN511FQ: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size231KB，17 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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UN511FQ Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PIN

UN511FQ Parametric

Parameter Name	Attribute value
Maker	Panasonic
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 2.13
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

UN511FQ Preview

Transistors with built-in Resistor

UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/

511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

Silicon PNP epitaxial planer transistor

For digital circuits

2.1±0.1

Unit: mm

Features

0.65

0.425

1.25±0.1

0.425

2.0±0.2

1.3±0.1

0.65

0.9±0.1

0 to 0.1

Marking Symbol

UN5111

UN5112

UN5113

UN5114

UN5115

UN5116

UN5117

UN5118

UN5119

UN5110

UN511D

UN511E

UN511F

UN511H

UN511L

UN511M

UN511N

UN511T

UN511V

UN511Z

)

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51Ω

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

2.2kΩ

4.7kΩ

22kΩ

2.2kΩ

4.7kΩ

)

10kΩ

22kΩ

47kΩ

—

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

47kΩ

2.2kΩ

22kΩ

0.7±0.1

0.2±0.1

1 : Base

2 : Emitter

3 : Collector

EIAJ : SC–70

S–Mini Type Package

Internal Connection

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

(Ta=25˚C)

Ratings

–50

–100

150

–55 to +150

Unit

˚C

0.15

-0.05

+0.1

Resistance by Part Number

0.2

0.3

-0

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

S-Mini type package, allowing automatic insertion through tape

packing and magazine packing.

+0.1

UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/

Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

Electrical Characteristics

Parameter

Collector cutoff current

UN5111

UN5112/5114/511E/511D/511M/511N/511T

UN5113

Emitter

cutoff

current

UN5115/5116/5117/5110

UN511F/511H

UN5119

UN5118/511L/511V

UN511Z

Collector to base voltage

UN511N/511T/511V/511Z

Collector to emitter voltage

UN511N/511T

UN5111

UN5112/511E

UN5113/5114/511M

Forward

current

transfer

ratio

UN5115*/5116*/5117*/5110*

UN511F/511D/5119/511H

UN5118/511L

UN511N/511T

UN511V

UN511Z

Collector to emitter saturation voltage

UN511V

Output voltage high level

Output voltage low level

UN5113

UN511D

UN511E

Transition frequency

UN511Z

UN5111/5114/5115

UN5112/5117/511T

UN5113/5110/511D/511E

Input

resis-

tance

UN5116/511F/511L/511N/511Z

UN5118

UN5119

UN511H/511M/511V

(Ta=25˚C)

Symbol

CBO

CEO

Conditions

= –50V, I

= 0

= –50V, I

= 0

min

typ

max

– 0.1

– 0.5

– 0.2

– 0.1

EBO

= –6V, I

= 0

– 0.01

–1.0

–1.5

–2.0

– 0.4

CBO

CEO

= –10µA, I

= 0

= –2mA, I

= 0

–50

160

= –10V, I

= –5mA

CE(sat)

= –10mA, I

= – 0.3mA

= –10mA, I

= –1.5mA

= –5V, V

= – 0.5V, R

= 1kΩ

= –5V, V

= –2.5V, R

= 1kΩ

= –5V, V

= –3.5V, R

= 1kΩ

= –5V, V

= –10V, R

= 1kΩ

= –5V, V

= –6V, R

= 1kΩ

= –10V, I

= 1mA, f = 200MHz

= –10V, I

= 1mA, f = 200MHz

150

(–30%)

4.7

0.51

2.2

(+30%)

kΩ

–4.9

– 0.2

MHz

400

200

– 0.25

460

Unit

µA

* h

rank classification (UN5115/5116/5117/5110)

Rank

160 to 260

210 to 340

290 to 460

UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/

Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

Electrical Characteristics (continued)

Parameter

UN5111/5112/5113/511L

UN5114

UN5118/5119

UN511D

Resis-

tance

ratio

UN511E

UN511F/511T

UN511H

UN511M

UN511N

UN511V

UN511Z

Symbol

(Ta=25˚C)

Conditions

min

0.8

0.17

0.08

typ

1.0

0.21

0.1

4.7

2.14

0.47

0.17

0.22

0.047

0.1

1.0

0.21

0.27

max

1.2

0.25

0.12

Unit

UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/

Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

Common characteristics chart

— Ta

240

Total power dissipation P

(mW)

200

160

120

160

Ambient temperature Ta (˚C)

Characteristics charts of UN5111

— V

–160

–140

=–1.0mA

Ta=25˚C

–100

CE(sat)

— I

Collector to emitter saturation voltage V

CE(sat)

(V)

=10

160

= –10V

— I

Ta=75˚C

–30

–10

–3

–1

–0.3

–0.1

–25˚C

–0.03

–0.01

–0.1 –0.3

Ta=75˚C

Collector current I

(mA)

–0.9mA

–120

–100

–80

–60

–0.3mA

–40

–0.2mA

–20

–0.1mA

–2

–4

–6

–8

–10

–12

–0.8mA

–0.7mA

–0.6mA

–0.5mA

–0.4mA

Forward current transfer ratio h

25˚C

120

–25˚C

25˚C

–1

–3

–10

–30

–100

–1

–3

–10

–30

–100 –300 –1000

Collector to emitter voltage V

(V)

Collector current I

(mA)

Collector current I

(mA)

— V

f=1MHz

Ta=25˚C

— I

=–5V

Ta=25˚C

–100

–30

= –0.2V

Ta=25˚C

–10000

–3000

Collector output capacitance C

(pF)

Output current I

(

µA

)

Input voltage V

(V)

–1000

–300

–100

–30

–10

–3

–10

–3

–1

–0.3

–0.1

–0.03

–0.01

–0.1 –0.3

–1

–3

–10

–30

–100

–1

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

–1

–3

–10

–30

–100

Collector to base voltage

(V)

Input voltage V

(V)

Output current I

(mA)

UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/

Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

Characteristics charts of UN5112

— V

–160

–140

Ta=25˚C

=–1.0mA

–0.9mA

–0.8mA

–0.7mA

–0.6mA

–0.5mA

–80

–60

–40

–20

–2

–4

–6

–8

–10

–12

–0.4mA

–0.3mA

–0.2mA

–0.1mA

–100

CE(sat)

— I

Collector to emitter saturation voltage V

CE(sat)

(V)

=10

— I

400

= –10V

–30

–10

–3

–1

–0.3

–0.1

–25˚C

–0.03

–0.01

–0.1 –0.3

Forward current transfer ratio h

Collector current I

(mA)

–120

–100

300

Ta=75˚C

200

25˚C

–25˚C

100

25˚C

Ta=75˚C

–1

–3

–10

–30

–100

–1

–3

–10

–30

–100 –300 –1000

Collector to emitter voltage V

(V)

Collector current I

(mA)

Collector current I

(mA)

— V

f=1MHz

Ta=25˚C

–10000

–3000

=–5V

Ta=25˚C

— I

–100

–30

=–0.2V

Ta=25˚C

Collector output capacitance C

(pF)

Output current I

(

µA

)

Input voltage V

(V)

–1000

–300

–100

–30

–10

–3

–10

–3

–1

–0.3

–0.1

–0.03

–0.01

–0.1 –0.3

–1

–3

–10

–30

–100

–1

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

–1

–3

–10

–30

–100

Collector to base voltage

(V)

Input voltage V

(V)

Output current I

(mA)

Characteristics charts of UN5113

— V

–160

=–1.0mA

–140

CE(sat)

— I

–100

— I

=10

400

= –10V

Ta=25˚C

Collector to emitter saturation voltage V

CE(sat)

(V)

Collector current I

(mA)

–120

–100

–80

–60

–40

–20

–2

–4

–6

–0.9mA

–0.8mA

–0.7mA

–0.6mA

–0.5mA

–30

–10

–3

–1

–0.3

–0.1

–25˚C

–0.03

–0.01

–0.1 –0.3

Ta=75˚C

Forward current transfer ratio h

300

Ta=75˚C

25˚C

200

–25˚C

–0.4mA

–0.3mA

–0.2mA

25˚C

100

–0.1mA

–8

–10

–12

–1

–3

–10

–30

–100

–1

–3

–10

–30

–100 –300 –1000

Collector to emitter voltage V

(V)

Collector current I

(mA)

Collector current I

(mA)

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