This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR511xG Series
Silicon PNP epitaxial planar type
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
S-Mini type package, allowing automatic insertion through the tape/
magazine packing
■
Package
•
Code
SMini3-F2
•
Pin Name
1: Base
2: Emitter
3: Collector
■
Resistance by Part Number
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR5110G
UNR5111G
UNR5112G
UNR5113G
UNR5114G
UNR5115G
UNR5116G
UNR5117G
UNR5118G
UNR5119G
UNR511DG
UNR511EG
UNR511FG
UNR511HG
UNR511LG
UNR511MG
UNR511NG
UNR511TG
UNR511VG
UNR511ZG
Marking symbol
6L
6A
6B
6C
6D
6E
6F
6H
6I
6K
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
■
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Publication date: July 2007
SJH00196AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR5110G/5115G/5116G/5117G
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.01
−
0.1
−
0.2
−
0.4
−
0.5
−1.0
−1.5
−2.0
h
FE
V
CE
=
−10
V, I
C
=
−5
mA
6
20
30
35
60
60
80
80
160
V
CE(sat)
V
OH
V
OL
I
C
= −10
mA, I
B
= −
0.3 mA
I
C
= −10
mA, I
B
= −1.5
mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
f
T
R
1
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
−30%
80
0.51
1.0
2.2
4.7
10
22
47
R
1
/R
2
0.08
0.047
0.1
0.10
0.21
0.12
+30%
MHz
kΩ
−4.9
−
0.2
V
V
400
460
−
0.25
V
200
20
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR5113G
(Collector open) UNR5112G/5114G/511DG/
511EG/511MG/511NG/511TG
UNR511ZG
UNR5111G
UNR511FG/511HG
UNR5119G
UNR5118G/511LG/511VG
Forward current UNR511VG
transfer ratio
UNR5118G/511LG
UNR5119G/511DG/511FG/511HG
UNR5111G
UNR5112/511EG
UNR511ZG
UNR5113/5114/511MG
UNR511N/511TG
UNR5110G
5116G
*
/5117G
*
*
/5115G
*
/
Collector-emitter saturation voltage
UNR511VG
Output voltage high-level
Output voltage low-level
UNR5113G
UNR511DG
UNR511EG
Transition frequency
Input
resistance
UNR5118G
UNR5119G
UNR511HG/511MG/511VG
UNR5116G/511FG/511LG
511NG/511ZG
UNR5111G/5114G/5115G
UNR5112G/5117G/511TG
UNR5110G/5113G/511DG/511EG
Resistance
ratio
UNR511MG
UNR511NG
UNR5118G/5119G
UNR511ZG
2
SJH00196AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance
ratio
UNR5114G
UNR511HG
UNR511TG
UNR511FG
UNR511VG
UNR5111G/5112G/5113G/511LG
UNR511EG
UNR511DG
0.8
1.70
3.7
0.37
Symbol
Conditions
Min
0.17
0.17
Typ
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
Max
0.25
0.27
Unit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR5110G
I
C
V
CE
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
−120
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
−40
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00196AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5111G
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
−100
I
C
/ I
B
=
10
160
V
CE
= −10
V
h
FE
I
C
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
25°C
120
−25°C
80
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−1
T
a
=
75°C
25°C
−
0.1
−25°C
−40
40
−
0.2 mA
−
0.1 mA
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
V
IN
I
O
−100
V
O
= −
0.2 V
T
a
=
25°C
5
4
Output current I
O
(
µA
)
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
−
0.01
−
0.1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00196AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR511xG Series
Characteristics charts of UNR5112G
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
−1
25°C
−
0.1
−25°C
T
a
= 75°C
T
a
= 75°C
200
25°C
−25°C
100
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
=
−5
V
T
a
= 25°C
V
IN
I
O
−100
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5113G
I
C
V
CE
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−10
300
T
a
=
75°C
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
100
0
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00196AED
5
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