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D1170S25T

Description
Rectifier Diode, 1 Phase, 1 Element, 2140A, 2500V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size73KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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D1170S25T Overview

Rectifier Diode, 1 Phase, 1 Element, 2140A, 2500V V(RRM), Silicon,

D1170S25T Parametric

Parameter NameAttribute value
package instructionO-CXDB-X3
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.62 V
JESD-30 codeO-CXDB-X3
JESD-609 codee3
Maximum non-repetitive peak forward current24000 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current2140 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2500 V
Maximum reverse recovery time5 µs
surface mountYES
Terminal surfaceMATTE TIN
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Base Number Matches1
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 1170 S 20...25
T
vj
= - 25°C...T
vj max
S
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
Grenzlastintegral
I²t-value
T
C
=85°C
T
C
=31°C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
V
RRM
V
RSM
I
FRMSM
I
FAVM
I
FSM
I²t
2000
2500
2100
2600
3360
1170
2140
27500
24000
3780000
2880000
V
V
V
V
A
A
A
A
A
A²s
A²s
T
vj
= + 25°C...T
vj max
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Typischer Wert der Durchlaßverzögerungsspannung
typical value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovered time
T
vj
= T
vj max
, i
F
= 6400 A
v
F
V
(TO)
r
T
V
FRM
max.
2,62
1,16
0,21
V
V
mΩ
V
1)
T
vj
= T
vj max
T
vj
= T
vj max
IEC 747-2
T
vj
= T
vj max
di
F
/dt= A/µs, v
R
=0V
IEC 747-2, Methode / method II
T
vj
= T
vj max,
i
FM
=
A
di
F
/dt= A/µs, v
R
=0V
T
vj
= 25°C,
v
R
=V
RRM
typ.
t
fr
typ.
µs
1)
i
R
I
RM
T
vj
= T
vj max
, v
R
= V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=1000A,-di
F
/dt=250A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=1000A,-di
F
/dt=250A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=1000A,-di
F
/dt=250A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
max.
max.
25
250
580
mA
mA
A
1)
Q
r
1700
µAs
1)
t
rr
5
µs
1)
Sanftheit
Softness
T
vj
= T
vj max
i
FM
=1000A,-di
F
/dt=250A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
SR
µs/A
2)
1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standard value)
2) Richtwert für untere Streubereichsgrenze / Lower limit of scatter range (standard value)
SZ-M / 29.04.93 , R.Jörke
A 11 / 93
Seite/page 1

D1170S25T Related Products

D1170S25T D1170S20T
Description Rectifier Diode, 1 Phase, 1 Element, 2140A, 2500V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2140A, 2000V V(RRM), Silicon,
package instruction O-CXDB-X3 O-CXDB-X3
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.62 V 2.62 V
JESD-30 code O-CXDB-X3 O-CXDB-X3
JESD-609 code e3 e3
Maximum non-repetitive peak forward current 24000 A 24000 A
Number of components 1 1
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Maximum output current 2140 A 2140 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2500 V 2000 V
Maximum reverse recovery time 5 µs 5 µs
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Base Number Matches 1 1
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