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Datasheet> All Categories > Discrete semiconductor> The transistor> UN9115J
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UN9115J

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size310KB，18 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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UN9115J Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN

UN9115J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-89
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz

UN9115J Preview

Transistors with built-in Resistor
UNR91XXJ Series
(UN91XXJ Series)
Silicon PNP epitaxial planer type
For digital circuit
I
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
SS-mini type package, allowing automatic insertion through tape
packing.
1.60
+0.05
–0.03
1.00
±0.05
3
1.60
±0.05
0.85
+0.05
–0.03
(0.375)
0.10 max.
0.80
±0.05
Unit: mm
0.12
+0.03
–0.01
1
0.27
±0.02
2
(0.80)
(0.50)(0.50)
0 to 0.02
I
Resistance by Part Number
Marking symbol (R
1
)
•
UNR9110J (UN9110J) 6L
47 kΩ
•
UNR9111J (UN9111J) 6A
10 kΩ
•
UNR9112J (UN9112J) 6B
22 kΩ
•
UNR9113J (UN9113J) 6C
47 kΩ
•
UNR9114J (UN9114J) 6D
10 kΩ
•
UNR9115J (UN9115J) 6E
10 kΩ
4.7 kΩ
•
UNR9116J (UN9116J) 6F
•
UNR9117J (UN9117J) 6H
22 kΩ
•
UNR9118J (UN9118J) 6I
0.51 kΩ
•
UNR9119J (UN9119J) 6K
1 kΩ
•
UNR911AJ
6X
100 kΩ
•
UNR911BJ
6Y
100 kΩ
•
UNR911CJ
6Z
•
UNR911DJ (UN911DJ) 6M
47 kΩ
•
UNR911EJ (UN911EJ) 6N
47 kΩ
•
UNR911FJ (UN911FJ) 6O
4.7 kΩ
•
UNR911HJ (UN911HJ) 6P
2.2 kΩ
•
UNR911LJ (UN911LJ) 6Q
4.7 kΩ
•
UNR911MJ
EI
2.2 kΩ
•
UNR911NJ
EW
4.7 kΩ
•
UNR911TJ (UN911TJ) EY
22 kΩ
•
UNR911VJ
FC
2.2 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
5°
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
0.70
+0.05
–0.03
SSMini3-F1 Package
Internal Connection
R
1
B
R
2
E
C
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
125
125
−55
to
+125
Unit
V
V
mA
mW
°C
°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2001
SJH00038AED
5°
1
UNR91XXJ Series
I
Electrical Characteristics
T
a
=
25°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter
cutoff
current
UNR9111J
UNR9112J/9114J/911DJ/
911EJ/911MJ/911NJ/911TJ
UNR9113J/911AJ
UNR9115J/9116J/9117J/
9110J/911BJ
UNR911FJ/911HJ
UNR9119J
UNR9118J/911LJ/911CJ/911VJ
Collector to base voltage
Collector to emitter voltage
Forward UNR9111J
current
UNR9112J/911EJ
transfer
UNR9113J/9114J/911AJ/
ratio
911CJ/911MJ
UNR9115J/9116J/9117J/
9110J/911BJ
UNR9118J/911LJ
UNR9119J/911DJ/911FJ/911HJ
UNR911NJ/911TJ
UNR911VJ
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
UNR9113J/911BJ
UNR911DJ
UNR911EJ
UNR911AJ
Transition frequency
Input
resis-
tance
UNR9118J
UNR9119J
UNR911HJ/911MJ/911VJ
UNR9116J/911FJ/911LJ/911NJ
UNR9111J/9114J/9115J
UNR9112J/9117J/911TJ
UNR9110J/9113J/911DJ/911EJ
UNR911AJ/911BJ
f
T
R
1
V
CE(sat)
V
OH
V
OL
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −5
V, R
L
=
1 kΩ
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
−30%
80
0.51
1
2.2
4.7
10
22
47
100
+30%
MHz
kΩ
−4.9
−
0.2
V
CBO
V
CEO
h
FE
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CE
= −10
V, I
C
= −5
mA
−50
−50
35
60
80
160
20
30
80
6
400
20
−
0.25
V
V
V
460
I
EBO
Conditions
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
Typ
Max
−
0.1
−
0.5
−
0.5
−
0.2
−
0.1
−
0.01
−1.0
−1.5
−2.0
V
V
mA
Unit
µA
2
SJH00038AED
UNR91XXJ Series
I
Electrical Characteristics (continued)
T
a
=
25°C
Parameter
Resis-
tance
ratio
UNR9111J/9112J/9113J/911LJ
UNR9114J
UNR9118J/9119J
UNR911DJ
UNR911EJ
UNR911FJ
UNR911HJ
UNR911MJ
UNR911NJ
UNR911TJ
UNR911AJ/911VJ
Resistance between emitter to base UNR911CJ
R
2
−30%
Symbol
R
1
/R
2
Conditions
Min
0.8
0.17
0.08
3.7
1.7
0.37
0.17
Typ
1.0
0.21
0.1
4.7
2.14
0.47
0.22
0.047
0.1
0.47
1.0
47
+30%
kΩ
Max
1.2
0.25
0.12
5.7
2.6
0.57
0.27
Unit
Common characteristics chart
P
T
T
a
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
Characteristics chart of UNR9110J
I
C
V
CE
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
T
a
=
25°C
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
−100
−30
−10
−3
−1
T
a
=
75°C
−0.3
−0.1
−25°C
25°C
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
–10 V
−120
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
200
25°C
−25°C
−40
100
−0.03
0
0
−2
−4
−6
−8
−10
−12
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00038AED
3
UNR91XXJ Series
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
V
IN
I
O
V
O
= −5
V
T
a
=
25°C
−100
−30
V
O
= −
0.2 V
T
a
= 25°C
−10
000
−3
000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−1
000
−300
−100
−30
−10
−3
−10
−3
−1
−0.3
−0.1
3
2
1
−0.03
0
−0.1 −0.3
−1
−3
−10
−30
−100
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics chart of UNR9111J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
−160
−140
I
B
= −1.0
mA
T
a
=
25°C
−100
−30
−10
−3
−1
−0.3
−0.1
−25°C
T
a
=
75°C
V
CE(sat)
I
C
I
C
/ I
B
=
10
160
V
CE
= −10
V
h
FE
I
C
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
25°C
120
−25°C
80
Collector current I
C
(mA)
−120
−100
−80
−60
−40
−20
0
−2
−4
−6
−8
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
0
−10
−12
25°C
40
−0.03
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
–10 000
−3
000
V
O
= −5
V
T
a
=
25°C
−100
−30
−10
−3
−1
−0.3
−0.1
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
−300
−100
−30
−10
−3
3
2
1
0
−0.1 −0.3
−1
−3
−10
−30
−100
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
Input voltage V
IN
(V)
−1
000
−0.03
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00038AED
UNR91XXJ Series
Characteristics chart of UNR9112J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
−160
−140
T
a
=
25°C
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−
0.4mA
−
0.3mA
−
0.2mA
−
0.1mA
−100
−30
−10
−3
−1
−0.3
−0.1
−25°C
25°C
T
a
= 75°C
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−100
−80
−60
−40
−20
0
−2
Forward current transfer ratio h
FE
300
T
a
= 75°C
200
25°C
−25°C
100
−0.03
0
−4
−6
−8
−10
−12
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
000
−3
000
V
O
=
−5
V
T
a
= 25°C
V
IN
I
O
−100
−30
V
O
= −
0.2 V
T
a
= 25°C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−1
000
−300
−10
−3
−1
−0.3
−0.1
3
−100
−30
−10
−3
2
1
−0.03
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
0
−0.1 −0.3
−1
−3
−10
−30
−100
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics chart of UNR9113J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
−140
T
a
=
25°C
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−2
−4
−6
−8
−10
−12
−100
−30
−10
−3
−1
−0.3
−0.1
−25°C
T
a
=
75°C
V
CE(sat)
I
C
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−100
−80
−60
−40
−20
0
300
T
a
=
75°C
25°C
200
−25°C
25°C
100
−0.03
0
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00038AED
5
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