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M28W160BTT90N6

Description
1MX16 FLASH 2.7V PROM, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size278KB,39 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28W160BTT90N6 Overview

1MX16 FLASH 2.7V PROM, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28W160BTT90N6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time90 ns
Other featuresTOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)2.7 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width12 mm
M28W160BT
M28W160BB
16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V: for Program, Erase and
Read
– V
DDQ
= 1.65V or 2.7V: Input/Output option
– V
PP
= 12V: optional Supply Voltage for fast
Program
µBGA
s
ACCESS TIME
– 2.7V to 3.6V: 90ns
– 2.7V to 3.6V: 100ns
s
PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
TSOP48 (N)
12 x 20mm
µBGA46 (GB)
8 x 6 solder balls
s
s
PROGRAM/ERASE CONTROLLER (P/E.C.)
COMMON FLASH INTERFACE
– 64 bit Security Code
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
Figure 1. Logic Diagram
s
s
BLOCK PROTECTION on TWO PARAMETER
BLOCKS
– WP for Block Protection
20
A0-A19
W
E
G
RP
WP
VDD VDDQ VPP
16
DQ0-DQ15
s
s
s
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS of DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W160BT: 90h
– Bottom Device Code, M28W160BB: 91h
s
M28W160BT
M28W160BB
s
VSS
AI02628
February 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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