Mixer Diode, High Barrier, X Band, 450ohm Z(V) Max, 6dB Noise Figure, Silicon,
| Parameter Name | Attribute value |
| Maker | Advanced Semiconductor, Inc. |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| frequency band | X BAND |
| maximum impedance | 450 Ω |
| minimum impedance | 250 Ω |
| JESD-30 code | O-LALF-W2 |
| maximum noise index | 6 dB |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Pulse input maximum power | 0.1 W |
| Certification status | Not Qualified |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Schottky barrier type | HIGH BARRIER |
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