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2SA1357-Y

Description
TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size159KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1357-Y Overview

TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power

2SA1357-Y Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
VCEsat-Max1 V
Base Number Matches1
2SA1357
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1357
Strobe Flash Applications
Audio Power Amplifier Applications
Unit: mm
h
FE(1)
= 100 to 320 (V
CE
=
−2
V, I
C
=
−0.5
A)
h
FE(2)
= 70 (min) (V
CE
=
−2
V, I
C
=
−4
A)
Low saturation voltage: V
CE (sat)
=
−1.0
V (max)
(I
C
=
−4
A, I
B
=
−0.1
A)
High power dissipation: P
C
= 10 W (Tc = 25°C),
P
C
= 1.5 W (Ta = 25°C)
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−35
−20
−8
−5
−8
−1
1.5
10
150
−55
to 150
A
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
2-8H1A
A
W
°C
°C
Weight: 0.82 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09

2SA1357-Y Related Products

2SA1357-Y 2SA1357-O
Description TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 160 100
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Maximum power consumption environment 10 W 10 W
Maximum power dissipation(Abs) 1.5 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 170 MHz 170 MHz
VCEsat-Max 1 V 1 V
Base Number Matches 1 1

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