2N3227UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3227UBJ)
•
JANTX level (2N3227UBJX)
•
JANTXV level (2N3227UBJV)
•
JANS level (2N3227UBJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
High-speed switching transistor
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0005
Reference document:
MIL-PRF-19500/317
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, T
A
= 25°C
Derate linearly above 70°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
P
T
T
C
= 25°C unless otherwise specified
Rating
20
40
6
0.4
3.08
325
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mW
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N3227UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
BEsat1
V
BEsat2
V
BEsat3
V
BEsat4
V
BEsat5
V
CEsat1
V
CEsat2
V
CEsat3
V
CEsat4
Symbol
|h
FE
|
C
OBO
C
IBO
t
s
t
ON
t
OFF
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CEX
I
CES
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 40 Volts
V
CB
= 32 Volts
V
CB
= 20 Volts, T
A
= 150°C
V
CE
= 10Volts, V
EB
= 0.25Volts
T
A
= 125°C
V
CE
= 20 Volts
V
EB
= 6 Volts
V
EB
= 4 Volts
Test Conditions
I
C
= 10 mA, V
CE
= 0.35 Volts
I
C
= 30 mA, V
CE
= 0.4 Volts
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 100 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
T
A
= -55°C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10mA, I
B
= 1mA,
T
A
=+125°C
I
C
= 10mA, I
B
= 1mA,
T
A
= -55°C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10mA, I
B
= 1mA,
T
A
=+125°C
Test Conditions
V
CE
= 10 Volts, I
C
= 10 mA,
f = 100 MHz
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
I
C
= 10 mA, I
B1
=I
B2
= 10 mA
I
C
= 10 mA, I
B1
= 3 mA,
I
B2
= 1.5 mA
I
C
= 10 mA, I
B1
= 3 mA,
I
B2
= 1.5 mA
Min
20
10
0.2
30
30
400
10
0.25
Min
70
40
75
30
20
0.70
0.80
0.50
Typ
Max
250
250
300
150
0.85
0.90
1.20
1.02
0.20
0.25
0.45
0.30
Min
5
Typ
Max
10
4
4
18
12
25
pF
pF
ns
ns
ns
Typ
Max
Units
Volts
µA
µA
nA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Units
DC Current Gain
Base-Emitter Saturation Voltage
Volts
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Storage Time
Saturated Turn-On Time
Saturated Turn-Off Time
Volts
Units
Copyright 2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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