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BYD17D/T3

Description
DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, GLASS, SO-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size60KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BYD17D/T3 Overview

DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, GLASS, SO-2, Signal Diode

BYD17D/T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionGLASS, SO-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.6 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time3 µs
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD17 series
General purpose
controlled avalanche rectifiers
Product specification
Supersedes data of 1999 Nov 11
2001 Oct 26
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