
Silicon Controlled Rectifier, 660A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AB
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier ( Infineon ) |
| package instruction | DISK BUTTON, O-CEDB-N2 |
| Reach Compliance Code | compliant |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 500 V/us |
| Maximum DC gate trigger current | 150 mA |
| Maximum DC gate trigger voltage | 3 V |
| JEDEC-95 code | TO-200AB |
| JESD-30 code | O-CEDB-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | 260 |
| Certification status | Not Qualified |
| Maximum rms on-state current | 660 A |
| Off-state repetitive peak voltage | 1400 V |
| Repeated peak reverse voltage | 1400 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | 40 |
| Trigger device type | SCR |