PR3001G–PR3007G
Vishay Lite–On Power Semiconductor
3.0A Fast Recovery Glass Passivated Rectifier
Features
D
D
D
D
Glass passivated die construction
Diffused junction
Fast switching for high efficiency
High current capability and low forward
voltage drop
D
Surge overload rating to 125A peak
D
Low reverse leakage current
D
Plastic material – UL Recognition flammability
classification 94V–0
14 423
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
=DC Bl ki voltage
DC Blocking lt
Test Conditions
Type
PR3001G
PR3002G
PR3003G
PR3004G
PR3005G
PR3006G
PR3007G
Symbol
V
RRM
=V
RWM
=V
R
V
Value
50
100
200
400
600
800
1000
125
3
–65...+150
Unit
V
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
T
A
=55
°
C
Junction and storage temperature range
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Reverse recovery time
y
Test Conditions
I
F
=3A
T
A
=25
°
C
T
A
=125
°
C
I
R
=1A, I
F
=0.5A,
I
rr
=0.25A
V
R
=4V, f=1MHz
Type
I
FSM
I
FAV
T
j
=T
stg
PR3001G–3003G
PR3004G–3005G
PR3006G–3007G
Diode capacitance
Thermal resistance
junction to terminal
Symbol
V
F
I
R
I
R
t
rr
t
rr
t
rr
C
D
R
thJT
Min
Typ
Max
1.3
5
100
150
250
500
50
32
Unit
V
m
A
m
A
ns
ns
ns
pF
K/W
Rev. A2, 24-Jun-98
1 (4)
PR3001G–PR3007G
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FAV
– Average Forward Current ( A )
Single phase half–wave
Resistive or inductive load
I
FSM
– Peak Forward Surge Current ( A )
4
200
3
100
2
1
0
0
15502
10
1
10
Number of Cycles at 60 Hz
100
25
50
75
100 125
150 175
15504
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
10
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
C
D
– Diode Capacitance ( pF )
T
j
= 25°C
f = 1 MHz
I
F
– Forward Current ( A )
1.0
10
0.1
0.01
0.6
15503
T
j
= 25°C
I
F
Pulse Width = 300
µs
1
1
15505
0.8
1.0
1.2
V
F
– Forward Voltage ( V )
10
V
R
– Reverse Voltage ( V )
100
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
PR3001G–PR3007G
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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