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PR1007

Description
Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size50KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

PR1007 Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM),

PR1007 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.5 µs
surface mountNO
BL
FEATURES
Low cost
GALAXY ELECTRICAL
PR1001---PR1007
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIER
DO - 41
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
PR
1001
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
PR
1002
100
70
100
PR
1003
200
140
200
PR
1004
400
280
400
1.0
PR
1005
600
420
600
PR
1006
800
560
800
PR
1007
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.2
5.0
100.0
250
18
55
- 55---- +150
- 55---- +150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261017
BL
GALAXY ELECTRICAL
1.

PR1007 Related Products

PR1007 PR1005 PR1006
Description Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Rectifier Diode, 1 Element, 1A, 600V V(RRM), Rectifier Diode, 1 Element, 1A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 1000 V 600 V 800 V
Maximum reverse recovery time 0.5 µs 0.25 µs 0.5 µs
surface mount NO NO NO

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