DP
AK
BUK9222-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
48
103
V
A
W
NXP Semiconductors
BUK9222-55A
N-channel TrenchMOS logic level FET
Quick reference data
…continued
Parameter
drain-source
on-state
resistance
Conditions
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
Min
-
-
-
Typ
-
17
19
Max Unit
24
20
22
mΩ
mΩ
mΩ
Table 1.
Symbol
R
DSon
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 48 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; nk;unclamped
-
-
160
mJ
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9222-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK9222-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 1 February 2011
2 of 13
NXP Semiconductors
BUK9222-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 48 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; nk;
unclamped
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
Max
55
55
15
48
34
193
103
175
175
48
193
160
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
peak drain current is limited by chip, not package.
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03aa16
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK9222-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 1 February 2011
3 of 13
NXP Semiconductors
BUK9222-55A
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
R
DSon
= V
DS
/ I
D
03ne72
t
p
= 10
μs
100
μs
10
P
δ
=
t
p
T
1 ms
D.C.
10 ms
t
p
T
t
100 ms
10
V
DS
(V)
10
2
1
1
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
71.4
Max
1.5
-
Unit
K/W
K/W
thermal resistance from junction see
Figure 4
to mounting base
thermal resistance from junction
to ambient
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
P
03ne73
δ
=
t
p
T
10
−2
Single Shot
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9222-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 1 February 2011
4 of 13
NXP Semiconductors
BUK9222-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 13
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
measured from drain to centre of die;
T
j
= 25 °C
measured from source lead to source
bond pad; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C; see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
1660
290
194
19
124
92
93
2.5
7.5
2210
346
266
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
Min
55
50
1
-
0.5
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
-
-
17
19
Max
-
-
2
2.3
-
10
500
100
100
44
24
20
22
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
52
81
1.2
-
-
V
ns
nC
BUK9222-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 1 February 2011
5 of 13
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