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BUK9516-55A_15

Description
N-channel TrenchMOS logic level FET
File Size231KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BUK9516-55A_15 Overview

N-channel TrenchMOS logic level FET

TO
-22
0A
B
BUK9516-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
= 49 A; V
sup
25 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
120
mJ
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C
Min
-
-
-
-
-
Typ
-
-
-
10
Max Unit
55
66
138
15
V
A
W
mΩ
mΩ
Static characteristics
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