2N1258 datasheet, PDF - EEWORLD Datasheet

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2N1258: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size52KB，1 Pages; ManufacturerCentral Semiconductor

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2N1258 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N1258 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	_compli
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	75
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.275 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Small Signal Transistors

TO-39 Case

TYPE NO.

DESCRIPTION

VCBO

(V)

VCEO

(V)

*VCER

VEBO

(V)

ICBO @

µ

(µA)

*ICEO

**ICES

***ICEV

****ICER

MIN

6.0

5.0

7.0

6.0

5.0

6.0

5.0

6.0

5.0

7.0

6.0

4.5

6.0

7.0

6.0

7.0

10

1.00

0.05

0.01

10

5.00

15

1.00

0.10

0.50

0.10

0.20

1.00

10

1.00

0.10

2.00

0.10

75

0.10

2.00

1.00

0.10

0.025

30

75

90

200

180

125

100

60

25

10

45

50

20

30

120

30

40

60

4.5

40

60

75

90

75

MIN

30

20

40

20

40

20

40

15

20

30

75

25

100

20

35

100

30

60

40

25

20

100

40

100

40

75

35

MAX

90

60

120

60

120

80

--

80

150

--

45

75

150

100

300

80

60

100

300

100

200

120

--

80

300

120

300

120

--

200

150

200

50

500

200

1.0

15

150

10

150

200

150

5.0

150

5.0

2.0

100

150

200

150

10

6.0

0.5

10

1.0

10

4.0

10

5.0

10

0.2

4.0

10

5.0

10

MAX

2.00

1.50

1.30

5.00

4.00

2.00

5.00

4.00

--

0.15

1.50

0.60

0.30

1.50

4.00

1.40

1.50

1.00

0.20

5.00

1.50

1.00

0.20

2.00

5.00

1.20

2.00

1.20

200

150

200

50

500

200

--

5.0

150

10

150

200

150

10

150

50

10

100

150

200

150

50

150

50

VCB

(V)

hFE

@ IC @ VCE VCE (SAT) @ IC

(mA)

(V)

(mA)

fT

Cob

(MHz) (pF)

*TYP *TYP

ton

(ns)

toff

(ns)

NF

(dB)

*TYP *TYP *TYP

MIN

2N656A

2N657A

2N696

2N697A

2N698

2N699B

2N1052

2N1053

2N1054

2N1055

2N1116

2N1117

2N1118

2N1119

NPN AMPL/SWITCH

NPN HIGH VOLTAGE

NPN AMPL/SWITCH

PNP AMPL/SWITCH

60

100

60

120

200

180

125

100

60

25

10

60

70

30

50

60

120

60

100

60

100

60

125

120

100

4.5

60

75

120

60

100

140

100

MIN

60

100

40

35

60

80

155

135

115

100

60

25

10

40

50

30

50

30

120

40

55

40

55

25

80

50

100

4.5

40

50

60

100

60

80

60

MIN

50

80

50

60

8.0

3.0

6.0

4.0

--

90

--

50

--

1.5

50

60

5.0

40

--

70

16

50

60

100

60

50

MAX

20

35

15

50

--

80

--

12

45

30

10

35

--

35

10

20

7.0

--

25

10

50

15

8.0

15

MAX MAX MAX

--

2N1131A PNP AMPL/SWITCH

2N1132B PNP AMPL/SWITCH

2N1258

2N1259

2N1420

2N1445

2N1479

2N1480

2N1481

2N1482

2N1507

2N1573

2N1574

2N1615

2N1676

2N1700

2N1711

2N1716

2N1717

2N1889

2N1890

2N1973

2N1974

PNP AMPL/SWITCH

NPN AMPL/SWITCH

PNP AMPL/SWITCH

NPN AMPL/SWITCH

2N1613B NPN AMPL/SWITCH

2N1711B NPN AMPL/SWITCH

2N1893A NPN AMPL/SWITCH

59

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2N1258 Related Products

	2N1258	2N1676	2N1973	2N1974	2N1055	2N1445	2N1573
Description	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 4.5V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.75A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli	_compli
Collector-emitter maximum voltage	30 V	4.5 V	60 V	60 V	100 V	120 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	75	25	75	35	20	20	30
JEDEC-95 code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	200 °C	140 °C	175 °C	175 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1
Maximum collector current (IC)	0.1 A	0.05 A	-	-	0.2 A	0.75 A	0.05 A
Maximum power dissipation(Abs)	0.275 W	-	0.8 W	0.8 W	0.6 W	0.8 W	0.6 W
Nominal transition frequency (fT)	-	40 MHz	60 MHz	50 MHz	3 MHz	0.075 MHz	60 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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