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2N1480

Description
Power Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size290KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

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2N1480 Overview

Power Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN

2N1480 Parametric

Parameter NameAttribute value
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)1.5 A
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)1.5 MHz
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