NE76184B-T1AK datasheet, PDF - EEWORLD Datasheet

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NE76184B-T1AK: DescriptionX BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size165KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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NE76184B-T1AK Overview

X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4

NE76184B-T1AK Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	DISK BUTTON, O-CRDB-F4
Contacts	4
Reach Compliance Code	unknown
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	5 V
FET technology	METAL SEMICONDUCTOR
highest frequency band	X BAND
JESD-30 code	O-CRDB-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

NE76184B-T1AK Preview

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas

Electronics Corporation

took over all the business of both

companies.

Therefore, although the old company name remains in this document, it is a valid

Renesas

Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1

, 2010

Renesas Electronics Corporation

Issued by:

Renesas Electronics Corporation

(http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

Notice

All information included in this document is current as of the date this document is issued. Such information, however, is

subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please

confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

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“Standard”:

10.

11.

12.

(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-

owned subsidiaries.

(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

DATA SHEET

GaAs MES FET

NE76184B

L to X BAND OSC

N-CHANNEL GaAs MES FET

NE76184B is a N-channel GaAs MES FET housed in ce-

ramic package. The device is fabricated by ion implantation for

improved RF and DC performance reliability and uniformity.

FEATURES

• Low noise figure & High associated gain

NF = 0.8 dB TYP., G

= 12 dB TYP. at f = 4 GHz

1.78 ±0.2

ORDERING INFORMATION

PART NUMBER

NE76184B-T1

NE76184B-T1A

SUPPLYING FORM

Tape & reel 1000 pcs./reel

Tape & reel 5000 pcs./reel

MARKING

ABSOLUTE MAXIMUM RATINGS (T

= 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

GSO

GDO

tot

stg

5.0

–5.0

–6.0

DSS

300

150

˚C

–65 to +150 ˚C

ELECTRICAL CHARACTERISTICS (T

= 25 ˚C)

PARAMETER

1. Source

2. Drain

3. Source (OPEN)

4. Gate

SYMBOL

GSO

DSS

GS (off)

MIN.

–

–0.5

–

TYP.

–

0.8

MAX.

100

–3.0

–

1.4

–

UNIT

TEST CONDITIONS

= –5 V

= 3 V, V

= 0

= 3 V, I

= 100

= 3 V, I

= 10 mA

= 3 V

= 10 mA

f = 12 GHz

f = 4 GHz

Gate to Source Leak Current

Document No. P11061EJ1V0DS00 (1st edition)

Data Published December 1995 P

Printed in Japan

Saturated Drain Current

Gate to Source Cutoff Voltage

Transconductance

Noise Figure

Associated Gain

Power Gain

DSS

rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)

0.1

1.7 MAX.

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

1.0 ±0.2

DESCRIPTION

0.4 MAX.

1.0 ±0.2

0.5 TYP.

1995

NE76184B

TYPICAL CHARACTERISTICS (T

= 25 ˚C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

500

tot

- Total Power Dissipation - mW

= 0 V

400

- Drain Current - mA

–0.2 V

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

300

200

100

150

200

- Ambient Temperature - ˚C

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

- Drain Current - mA

–2.0

–1.0

- Gate to Source Voltage - V

= 3 V

–0.4 V

–0.6 V

–0.8 V

–1.0 V

- Drain to Source Voltage - V

NE76184B

S-PARAMETER

MAG. AND ANG.

= 3 V, I

= 10 mA

FREQUENCY

MHz

2000

3000

4000

5000

6000

7000

8000

9000

10000

11000

12000

13000

14000

15000

16000

17000

18000

S11

MAG.

.920

.834

.741

.680

.637

.612

.591

.585

.589

.596

.606

.613

.630

.649

.664

.671

.683

ANG.

(deg.)

–57.6

–84.6

–110.4

–133.8

–155.9

–177.1

164.0

146.0

128.3

110.9

94.9

78.7

63.2

48.1

31.9

16.5

3.0

MAG.

3.323

3.007

2.661

2.397

2.150

1.940

1.743

1.597

1.491

1.385

1.283

1.207

1.137

1.074

1.021

.956

.914

S21

ANG.

(deg.)

128.6

105.6

84.7

66.0

48.8

32.1

17.2

3.2

–10.5

–23.7

–36.7

–49.5

–61.8

–74.3

–87.4

–100.4

–112.9

MAG.

.074

.097

.110

.116

.117

.115

.116

.121

.130

.140

.159

.175

.196

.220

.241

.266

S12

ANG.

(deg.)

52.8

36.6

23.8

13.2

4.7

–.3

–4.1

–6.9

–7.8

–10.0

–12.9

–16.6

–22.6

–29.9

–38.4

–47.2

–58.0

MAG.

.711

.658

.606

.563

.539

.527

.522

.524

.525

.527

.532

.548

.559

.566

.576

.579

.581

S22

ANG.

(deg.)

–33.6

–48.2

–61.7

–74.7

–87.6

–98.9

–109.8

–121.5

–132.9

–145.2

–157.3

–169.4

178.8

166.8

154.4

141.4

127.9

= 3 V, I

= 30 mA

FREQUENCY

MHz

2000

3000

4000

5000

6000

7000

8000

9000

10000

11000

12000

13000

14000

15000

16000

17000

18000

S11

MAG.

.886

.783

.691

.637

.603

.584

.568

.567

.574

.587

.597

.608

.624

.644

.662

.671

.682

ANG.

(deg.)

–64.9

–93.7

–120.2

–143.9

–165.7

173.9

155.8

138.5

121.5

104.9

89.1

73.5

58.3

43.3

28.1

12.8

–.4

MAG.

4.307

3.753

3.224

2.843

2.516

2.242

2.001

1.827

1.699

1.573

1.456

1.370

1.292

1.215

1.150

1.081

1.030

S21

ANG.

(deg.)

124.9

101.5

81.3

63.4

47.0

31.1

16.8

3.4

–9.9

–22.9

–35.6

–48.1

–60.4

–72.9

–85.7

–98.7

–111.5

S12

S22

MAG.

.061

.076

.087

.094

.098

.103

.110

.119

.130

.145

.162

.182

.200

.223

.248

.262

.285

ANG.

(deg.)

52.7

38.5

29.2

21.3

16.6

13.5

11.0

8.7

5.3

–4.4

–11.0

–19.1

–27.6

–37.4

–47.3

–58.4

MAG.

.614

.561

.514

.479

.460

.455

.453

.461

.467

.471

.479

.497

.513

.524

.539

.546

.545

ANG.

(deg.)

–34.1

–47.9

–60.7

–73.4

–86.3

–97.9

–109.2

–121.2

–133.3

–146.2

–159.0

–171.3

176.5

164.4

151.9

138.7

125.3

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NE76184B-T1AK Related Products

	NE76184B-T1AK	NE76184B-T1AN
Description	X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4	X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4
Contacts	4	4
Reach Compliance Code	unknown	unknown
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	5 V	5 V
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	X BAND	X BAND
JESD-30 code	O-CRDB-F4	O-CRDB-F4
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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