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2SB754Y

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size184KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB754Y Overview

Transistor

2SB754Y Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB754
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SD844
・High
collector current :I
C
=-7A
・Low
collector saturation voltage
・High
power dissipation
APPLICATIONS
・High
current switching applications
・Power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
PARAMETER
固电
导½
ANG
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-50
-50
-5
-7
7
UNIT
V
V
V
A
A
CH
IN
Emitter current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.5
W
60
150
-55~150

2SB754Y Related Products

2SB754Y 2SB754
Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1

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