Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB754
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SD844
・High
collector current :I
C
=-7A
・Low
collector saturation voltage
・High
power dissipation
APPLICATIONS
・High
current switching applications
・Power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
PARAMETER
固电
导½
半
ANG
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-50
-50
-5
-7
7
UNIT
V
V
V
A
A
CH
IN
Emitter current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.5
W
60
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-50mA ;I
B
=0
I
E
=-10mA; I
C
=0
I
C
=-4.0A; I
B
=-0.4A
I
C
=-4A ; V
CE
=-1V
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-50
-5
-0.2
-0.9
TYP.
2SB754
MAX
UNIT
V
V
-0.4
-1.2
-10
-10
240
V
V
μA
μA
电半
固
Y
DC current gain
导½
Transition frequency
Collector output capacitance
h
FE-1
Classifications
O
70-140
HA
INC
120-240
ES
NG
I
E
=0;f=1MHz ; V
CB
=-10V
MIC
E
OR
UCT
ND
O
10
300
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB754
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:
±0.10
mm)
3
Inchange Semiconductor
Product Specification
Silicon Power Transistors
2SB754
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4