2SK3085
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3085
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 1.7
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 3 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
±30
3.5
14
75
227
3.5
7.5
150
−55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
2-10P1B
Weight: 2.0 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
1.67
83.3
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
28.8 mH, R
G
=
25
Ω,
I
AR
=
3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2009-09-29
2SK3085
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
3.5 A
−
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
I
D
=
1.8 A
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
G
= ±10 μA,
V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
1.8 A
V
DS
=
10 V, I
D
=
1.8 A
Min
⎯
±30
⎯
600
2.0
⎯
2.0
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.7
3.0
800
6
65
15
50
15
85
20
10
10
Max
±10
⎯
100
⎯
4.0
2.2
⎯
⎯
⎯
pF
Unit
μA
V
μA
V
V
Ω
S
⎯
10 V
0V
50
Ω
⎯
⎯
⎯
ns
⎯
V
OUT
V
GS
⎯
⎯
⎯
⎯
⎯
⎯
R
L
=
111
Ω
⎯
⎯
⎯
⎯
⎯
nC
Duty
<
1%, t
w
=
10
μs
=
V
DD
∼
220 V
−
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
3.5 A, V
GS
=
0 V
I
DR
=
3.5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
400
2.6
Max
3.5
14
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3085
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK3085
I
D
– V
DS
2.0
Common source
Tc
=
25 °C
Pulse test
8
1.2
4.8
0.8
4.6
0.4
4.4
4.2
0
VGS
=
4 V
0
1
2
3
4
5
0
10
15
7
6
5
4
5
Common source
Tc
=
25 °C
10
Pulse test
I
D
– V
DS
15
7
6
8
1.6
Drain current I
D
(A)
Drain current I
D
(A)
5.5
3
5.5
2
5
1
4.5
VGS
=
4 V
0
4
8
12
16
20
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
DS
4
Common source
VDS
=
20 V
Pulse test
20
V
DS
– V
GS
Common source
Tc
=
25 °C
Pulse test
Tc
= −55
°C
25
V
DS
(V)
Drain-source voltage
16
Drain current I
D
(A)
3
12
2
100
8
ID
=
3.5 A
1
4
1.8
1
0
0
2
4
6
8
10
0
0
4
8
12
16
20
24
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y
fs
⎪
– I
D
10
Common source
VDS
=
20 V
Pulse test
10
Common source
Tc
=
25 °C
Pulse test
R
DS (ON)
– I
D
(S)
Forward transfer admittance
⎪Y
fs
⎪
3
100
Drain-source on resistance
R
DS (ON)
(Ω)
5
Tc
= −55
°C
25
5
3
VGS
=
10, 15 V
1
1
0.5
0.3
0.1
0.5
0.3
0.1
0.3
0.5
1
3
5
10
0.3
0.5
1
3
5
10
Drain current I
D
(A)
Drain current I
D
(A)
3
2009-09-29
2SK3085
R
DS (ON)
– Tc
10
Common source
VGS
=
10 V
Pulse test
30
Common source
Tc
=
25 °C
Pulse test
I
DR
– V
DS
(A)
Drain reverse current I
DR
Drain-source on resistance
R
DS (ON)
(Ω)
8
10
5
3
6
4
ID
=
2.5 A
1
1
0.5
0.3
3
10
VGS
=
0,
−1
V
2
0
−80
−40
0
40
80
120
160
0
1
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Case temperature Tc
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
3000
5
V
th
– Tc
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
V
th
(V)
Gate threshold voltage
1000
500
300
100
50
30
Common source
V
=
0V
10 GS
f
=
1 MHz
Tc
=
25 °C
3
1
3
5
10
30
Ciss
4
(pF)
3
Capacitance C
Coss
2
1
Crss
50
100
0
−80
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc
(°C)
P
D
– Tc
100
Drain power dissipation P
D
(W)
80
60
40
20
0
0
40
80
120
160
200
Case temperature Tc
(°C)
4
2009-09-29
2SK3085
r
th
−
t
w
3
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
1
0.5
0.3
Duty
=
0.5
0.2
0.1
0.1
0.05
0.03
0.01
0.01
0.005
0.003
10
μ
100
μ
1m
10 m
100 m
0.05
0.02
Single pulse
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
1.67°C/W
1
10
Pulse width
t
w
(S)
Safe operating area
100
250
50
30
ID max (pulse)
*
10
100
μs
*
E
AS
– T
ch
E
AS
(mJ)
Avalanche energy
200
150
(A)
5
3
ID max
(continuous)
1 ms
*
100
I
D
Drain current
1
0.5
0.3
DC operation
Tc
=
25°C
50
0
25
50
75
100
125
150
0.1
*
Single nonrepetitive pulse
0.05
0.03
Tc
=
25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
0.01
1
3
10
30
100
300
1000
Channel temperature
Tch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Drain-source voltage
V
DS
(V)
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
28.8 mH
Wave form
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
2
−
VDD
⎟
⎝
VDSS
⎠
5
2009-09-29
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