2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
5.2
±
0.2
1.5
±
0.2
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 1.6
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
=
−100 μA
(max) (V
DS
=
−200
V)
Enhancement model: V
th
=
−1.5
to
−3.5
V (V
DS
=
−10
V, I
D
=
−1
mA)
0.8 MAX.
0.6
±
0.15
1
1.2 MAX.
Unit: mm
6.5
±
0.2
0.6 MAX.
5.5
±
0.2
9.5
±
0.3
1.1
±
0.2
0.6 MAX.
2
3
2.3
±
0.2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−200
−200
±20
−2.5
−10
20
97.5
−2.5
2.0
150
−55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1.05 MAX.
0.1
±
0.1
2.3
±
0.15 2.3
±
0.15
2
1
GATE
DRAIN
（HEAT
SINK）
3. SOURSE
1.
2.
3
Drain power dissipation (Tc
=
25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= −50
V, Tch
=
25°C (initial), L
= −25.2
mH, I
AR
= −2.5
A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05
2SJ567
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
0V
I
D
= −1.5
A V
OUT
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
= −200
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
V
DS
= −10
V, I
D
= −1
mA
V
GS
= −10
V, I
D
= −1.5
A
V
DS
= −10
V, I
D
= −1.5
A
Min
⎯
⎯
−200
−1.5
⎯
1.0
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
1.6
2.0
410
40
145
20
Max
±10
−100
⎯
−3.5
2.0
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
50
Ω
R
L
=
66.7
Ω
⎯
V
DD
≈ −100
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
Turn-on time
Switching time
Fall time
V
GS
−10
V
45
15
⎯
⎯
⎯
⎯
⎯
nC
Turn-off time
Total gate charge
(Gate source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Duty
≤
1%, t
w
=
10
μs
85
10
6
4
V
DD
≈ −160
V, V
GS
= −10
V,
I
D
= −2.5
A
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
= −2.5
A, V
GS
=
0 V
I
DR
= −2.5
A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
135
0.81
Max
−2.5
−10
2.0
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
J567
Part No.
Lot No.
Note 4
2
2010-02-05
2SJ567
I
D
– V
DS
−2.0
Common source
Tc
=
25°C
Pulse test
−15
−10
−4.6
−4 −15
−8
−6
−5
−4.8
−5
−10
−6
−8
I
D
– V
DS
Common source
Tc
=
25°C
Pulse test
−5.75
−5.5
−5.25
−5
−2
−4.8
−4.6
−4.4
−1
−4.2
VGS
= −4
V
−10
−20
−30
−40
−50
−1.6
Drain current I
D
(A)
−1.2
Drain current I
D
(A)
−5
−4.4
−4.2
VGS
= −4
V
−3
−0.8
−0.4
0
0
−1
−2
−3
−4
0
0
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
−10
Common source
−8
VDS
= −10
V
Pulse test
Tc
= −55°C
−10
V
DS
– V
GS
Common source
V
DS
(V)
−8
Tc
=
25°C
Pulse test
Drain current I
D
(A)
Drain-source voltage
−6
25
−6
−4
100
−4
ID
= −2.5
A
−1.5
−2
−0.8
−2
0
0
−2
−4
−6
−8
−10
0
0
−4
−8
−12
−16
−20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y
fs
⎪
– I
D
10
Common source
10
Common source
Tc
=
25°C
Pulse test
25
100
VDS
= −10
V
Pulse test
R
DS (ON)
– I
D
(S)
Forward transfer admittance
⎪Y
fs
⎪
Drain-source ON-resistance
R
DS (ON)
(Ω)
Tc
= −55°C
VGS
= −10
V
−15
1
1
0.1
−0.1
−1
−10
0.1
−0.1
−1
−10
Drain current I
D
(A)
Drain current I
D
(A)
3
2010-02-05
2SJ567
R
DS (ON)
– Tc
6
Common source
VGS
= −10
V
Pulse test
ID
= −1.5
A
−10
Common source
Tc
=
25°C
Pulse test
I
DR
– V
DS
Drain-source ON-resistance
R
DS (ON)
(Ω)
4
−1.2
Drain reverse current I
DR
(A)
−1
5
3
−1.0
2
1
−5
0
−80
−40
0
40
80
120
160
−0.1
0
0.2
−3
0.4
−1
0.6
VGS
=
0 V
0.8
1
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
1000
Ciss
-5
V
th
– Tc
Common source
V
th
(V)
-4
VDS
=
10 V
ID
=
1 mA
Pulse test
(pF)
Gate threshold voltage
100
Coss
-3
Capacitance C
-2
10
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
−0.1
−1
−10
Crss
-1
0
−80
−100
−40
0
40
80
120
160
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
P
D
– Tc
40
−160
Dynamic input/output characteristics
VDS
VDS
= −40
V
−120
−160
−80
−80
−40
VGS
−4
−12
Common source
ID
= −2.5
A
Tc
=
25°C
−8
Pulse test
−16
Drain power dissipation P
D
(W)
20
10
0
0
40
80
120
160
0
0
4
8
12
16
20
Case temperature Tc (°C)
Total gate charge Q
g
(nC)
4
2010-02-05
Gate-source voltage
V
GS
30
Drain-source voltage
V
DS
(V)
(V)
2SJ567
r
th
– t
w
3
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
1
0.5
0.3
0.1
0.05
0.03
0.01
0.005
0.003
0.001
10
μ
Duty
=
0.5
0.2
0.1
0.05
0.02
Single pulse
PDM
t
0.01
T
Duty
=
t/T
Rth (ch-c)
=
6.25°C/W
100
μ
1m
10 m
100 m
1
10
100
Pulse width
t
w
(S)
Safe operating area
−30
−10
−5
−3
ID max (pulse)
*
100
μs*
100
E
AS
– T
ch
Avalanche energy EAS (mJ)
80
1 ms*
(A)
60
Drain current ID
−1
−0.5
−0.3
−0.1
−0.05
−0.03
−0.01
−0.005
−0.1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
−0.3
−1
−3
−10
−30
−100
−300
VDSS max
DC
operation
40
20
0
25
50
75
100
125
150
Channel temperature Tch (°C)
Drain-source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Test circuit
R
G
=
25
Ω
V
DD
= −50
V, L
=
25.2 mH
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2010-02-05
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