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2SC5096TE85L

Description
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size450KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC5096TE85L Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC5096TE85L Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.015 A
Collector-based maximum capacity0.85 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10000 MHz
Base Number Matches1
2SC5096
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5096
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.8dB, |S
21e
|
2
= 7.5dB (f = 2 GHz)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
Rating
20
10
1.5
7
15
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Microwave Characteristics
(Ta
=
25°C)
Characteristics
Transition frequency
Insertion gain
Symbol
f
T
⎪S
21e
(1)
⎪S
21e
(2)
NF (1)
NF (2)
2
2
Test Condition
V
CE
=
6 V, I
C
=
7 mA
V
CE
=
6 V, I
C
=
7 mA, f
=
1 GHz
V
CE
=
6 V, I
C
=
7 mA, f
=
2 GHz
V
CE
=
6 V, I
C
=
3 mA, f
=
1 GHz
V
CE
=
6 V, I
C
=
3 mA, f
=
2 GHz
Min
7
4.5
Typ.
10
13
7.5
1.4
1.8
Max
3.0
Unit
GHz
dB
Noise figure
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note 1)
C
ob
C
re
Test Condition
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
6 V, I
C
=
7 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz (Note 2)
Min
50
Typ.
0.5
0.4
Max
1
1
160
0.85
pF
pF
Unit
μA
μA
Note 1: h
FE
classification R: 50~100, O: 80~160
Note 2: C
re
is measured by 3 terminal method with capacitance bridge.
1
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