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2SA1588-GR

Description
TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size205KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA1588-GR Overview

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

2SA1588-GR Parametric

Parameter NameAttribute value
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.1 W
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.25 V
Base Number Matches1
2SA1588
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1588
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent h
FE
linearity:
h
FE (2)
= 25 (min)
at V
CE
=
−6
V, I
C
=
−400
mA
Complementary to 2SC4118
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−35
−30
−5
−500
−50
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-70
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.006 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Symbol
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= −35
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −1
V, I
C
= −100
mA
V
CE
= −6
V, I
C
= −400
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −1
V, I
C
= −100
mA
V
CE
= −6
V, I
C
= −20
mA
V
CB
= −6
V, I
E
=
0, f
=
1 MHz
Min
70
25
Typ.
−0.1
−0.8
200
13
Max
−0.1
−0.1
400
−0.25
−1.0
V
V
MHz
pF
Unit
μA
μA
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
FE (1)
classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (
h
FE (2)
classification O: 25 (min), Y: 40 (min), GR: 75 (min)
) Marking Symbol
Marking
Start of commercial production
1987-01
1
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