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2SA1618TE85R

Description
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size203KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1618TE85R Overview

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SA1618TE85R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SA1618
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1618
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current: V
CEO
=
−50
V, I
C
=
−150
mA (max)
High h
FE:
h
FE
= 120~400
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/ h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
Complementary to 2SC4207
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
−50
−50
−5
−150
−30
300
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit
(top view)
1
2007-11-01

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Description TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 2-3L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Collector-based maximum capacity 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE) 120 120 120 120 200 120
JESD-30 code R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
Number of components 2 2 2 2 2 2
Number of terminals 5 5 5 5 5 5
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 120 MHz 80 MHz 80 MHz 80 MHz 80 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
Base Number Matches 1 1 1 1 1 1
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