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STA413

Description
3 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size18KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

STA413 Overview

3 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR

STA413 Parametric

Parameter NameAttribute value
Number of terminals10
Transistor polarityNPN
Maximum collector current3 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionSTA, SIP-10
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureCOMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE
Number of components4
Transistor component materialsSILICON
Maximum ambient power consumption4 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor500
STA413A
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
Ratings
35±5
35±5
6
3
1
4 (T
a
=25°C)
20 (T
c
=25°C)
150
–40 to +150
NPN
With built-in avalanche diode
(T
a
=25°C)
External dimensions
D
•••
STA400
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
30
500
0.5
V
min
Specification
typ
max
10
10
40
Unit
(T
a
=25°C)
Unit
V
V
V
A
A
W
°C
°C
Conditions
V
CB
=30V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=1A, I
B
=5mA
µ
A
µ
A
V
sEquivalent
circuit diagram
3
2
1
4
5
6
7
8
9
10
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
3.0
15
mA
h
FE
-I
C
Characteristics (Typical)
(V
CE
=4V)
5000
h
FE
-I
C
Temperature Characteristics (Typical)
5000
(V
CE
=4V)
10
m
8m
A
6mA
A
5mA
4mA
Ta=125
°C
2.0
typ
3mA
I
C
(A)
1000
2mA
I
B
=1mA
1000
75
°C
25
°C
h
FE
h
FE
500
100
0.01
55
°
C
500
1.0
0
0
1.0
2.0
3.0
0.05
0.1
0.5
1
3
100
0.01
0.05
0.1
0.5
1
3
V
CE
(V)
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Characteristics (Typical)
1.2
V
CE
(sat)-I
B
Characteristics (Typical)
1.2
I
C
-V
BE
Temperature Characteristics (Typical)
4.0
(V
CE
=4V)
1.0
500
1.0
3.0
I
C
=3
A
I
C
/ I
B
=
V
CE
(sat) (V)
V
CE
(sat) (V)
I
C
(A)
2.0
2A
0.5
100
0.5
1.0
20
Ta
=1
25
°
C
75
°
25 C
°
C
1A
0.5A
0
0.01
0
0.05
0.1
0.5
1
3
1
5
10
50 100
500 1000
0
0
0.5
–55
°
C
1.0
1.5
I
C
(A)
I
B
(mA)
V
BE
(V)
θ
j-a
-PW Characteristics
20.0
10.0
20
5.0
24
P
T
-T
a
Characteristics
10.0
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
Safe Operating Area (SOA)
1m
With Infinite Heatsink
s
5.0
10
m
s
θ
j–a
(°C / W)
16
10
0
m
P
T
(W)
s
12
50
×
50
×
2
25
×
50
×
2
Without Heatsink
I
C
(A)
100
×
100
×
2
1.0
0.5
1.0
DC
(T
8.0
C
=
25
°
C
)
0.5
Single Pulse
Without Heatsink
T
a
=25°C
4.0
0.1
0.1
0.5 1.0
5.0 10
50100
5001000
5000
0
–40
0.2
0
50
100
150
2
5
10
50
PW (mS)
T
a
(°C)
V
CE
(V)
134

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