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2SB1686

Description
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size25KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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2SB1686 Overview

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN

2SB1686 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Shell connectionISOLATED
Maximum collector current (IC)6 A
Collector-emitter maximum voltage110 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)5000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
(7 0
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–110
–110
–5
–6
–1
30(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1686
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
100
typ
110
typ
V
V
13.0min
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2642)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
16.9
±0.3
V
8.4
±0.2
µ
A
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
A
m
–1
V
C E
( sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a t i o n Vol t ag e V
C E (s at)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
C E
=– 4 V )
–6
–6
A
–5m
–0
.5
m
A
–0
.4
mA
– 0 .3 m A
C ol l e c t o r C ur r en t I
C
( A)
–0 .2 mA
–4
Co l l e c t o r Cu r r e n t I
C
( A)
–2
– 5A
–4
p)
Tem
(Ca
125
˚C
–2
–1
–2
25˚C
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
–1
–30˚
C (C
ase
(Ca
se T
I
C
= – 3A
se
I
B
=–0 .1m A
emp
)
Tem
p)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
–2
–3
C oll ec t or - Emi t t e r V ol tag e V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
BE
( V )
(V
C E
=– 4 V )
50000
D C Cu r r en t Ga i n h
FE
D C Cu r r en t Ga i n h
FE
50000
( V
C E
= – 4 V)
1 25 ˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5.0
10000
5000
Typ
10000
5000
2 5˚ C
– 30 ˚ C
1.0
1000
500
1000
500
0.5
0.3
100
–0.01
–0.0 5 –0 . 1
– 0. 5
–1
–5 –6
100
–0.01
– 0 .0 5 – 0 .1
– 0. 5
–1
–5 –6
1
10
Time t(ms)
100
1 0 00
Co l le ct o r Cu rre nt I
C
(A)
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 12 V )
120
–20
–10
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
Typ
–5
Co lle cto r Cu r r e n t I
C
( A )
10
0m
10
s
m
s
Ma xi mu m Po w e r Di s s i p a t i o n P
C
( W )
W
ith
80
D
C
20
In
fin
ite
he
60
at
–1
– 0 .5
Without Heatsink
Natural Cooling
– 0 .1
si
nk
40
10
20
W i t h ou t H ea t s i nk
2
0
0
0.02
0.05
0.1
0.5
1
5 6
– 0 .0 5
–3
–5
–1 0
–5 0
–1 00
–2 0 0
0
25
50
75
10 0
125
150
Emi t t e r C u rren t I
E
(A)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
57

2SB1686 Related Products

2SB1686 2SB1686O 2SB1686P 2SB1686Y
Description Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 6 A 6 A 6 A 6 A
Collector-emitter maximum voltage 110 V 110 V 110 V 110 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 5000 5000 6500 15000
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1

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