RN2104MFV datasheet, PDF - EEWORLD Datasheet

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RN2104MFV: DescriptionTRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size195KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2104MFV Overview

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal

RN2104MFV Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

RN2104MFV Preview

RN2101MFV∼RN2106MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101MFV,RN2102MFV,RN2103MFV

RN2104MFV,RN2105MFV,RN2106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

0.22 ± 0.05

Unit: mm

1.2 ± 0.05

0.32 ± 0.05

0.80 ± 0.05

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1101MFV to RN1106MFV

0.8 ± 0.05

1

1.2 ± 0.05

0.4

1

3

2

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

Type No.

RN2101MFV

RN2102MFV

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

R1 (kΩ)

4.7

10

22

47

2.2

4.7

R2 (kΩ)

4.7

10

22

47

0.5 ± 0.05

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2101MFV to 2106MFV

RN2101MFV to 2104MFV

RN2105MFV, 2106MFV

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

(Note 1)

T

j

T

stg

Rating

−50

−10

−5

−100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit

V

mA

mW

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

×

25.4 mm

×

1.6 mm)

0.5

0.45

Land Pattern Example

Unit:mm

1.15

0.4

0.45

0.4

1

2010-04-06

RN2101MFV∼RN2106MFV

Electrical Characteristics

(Ta = 25°C)

Characteristic

Collector cutoff

current

RN2101MFV to

2106MFV

RN2101MFV

RN2102MFV

Emitter cutoff current

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

RN2101MFV

RN2102MFV

DC current gain

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

Collector-emitter

saturation voltage

RN2101MFV to

2106MFV

RN2101MFV

RN2102MFV

Input voltage (ON)

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

RN2101MFV to

2104MFV

RN2105MFV,

2106MFV

Transition frequency

Collector output

capacitance

RN2101MFV to

2106MFV

RN2101MFV to

2106MFV

RN2101MFV

RN2102MFV

Input resistor

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

RN2101MFV to

2104MFV

Resistor ratio

RN2105MFV

RN2106MFV

R1/R2

―

R1

―

V

CE

=

−5

V,

I

C

=

−0.1

mA

V

CE

=

−10V,

I

C

=

−5mA

V

CB

=

−10

V, I

E

= 0,

f = 1 MHz

V

I (ON)

―

V

CE

=

−0.2

V,

I

C

=

−5

mA

V

CE (sat)

―

I

C

=

−5

mA,

I

B

=

−0.5

mA

h

FE

―

V

CE

=

−5

V,

I

C

=

−10

mA

I

EBO

―

V

EB

=

−10

V, I

C

= 0

Symbol

I

CBO

I

CEO

Test

Circuit

―

Test Condition

V

CB

=

−50

V, I

E

= 0

V

CE

=

−50

V, I

B

= 0

Min

―

−0.82

−0.38

−0.17

−0.082

V

EB

=

−5

V, I

C

= 0

−0.078

−0.074

30

50

70

80

―

−1.1

−1.2

−1.3

−1.5

−0.6

−0.7

−1.0

−0.5

―

3.29

7

15.4

32.9

1.54

3.29

0.8

0.0376

Typ.

―

−0.1

―

250

0.9

4.7

10

22

47

2.2

4.7

1.0

0.0468

Max

−100

−500

−1.52

−0.71

−0.33

−0.15

−0.145

−0.138

―

−0.3

−2.0

−2.4

−3.0

−5.0

−1.1

−1.3

−1.5

V

−0.8

―

6.11

13

28.6

61.1

2.86

6.11

1.2

0.0562

―

kΩ

MHz

pF

V

―

mA

Unit

nA

Input voltage (OFF)

V

I (OFF)

―

f

T

C

ob

―

0.08

0.1

0.12

2

2010-04-06

RN2101MFV∼RN2106MFV

RN2101MFV

-100

IC - VI(ON)

-100

RN2102MFV

IC - VI(ON)

COLLECTOR CURRENT IC (mA)

-10

Ta = 100°C

COLLECTOR CURRENT IC (mA)

-10

Ta = 100°C

25

-1

-25

EMMITER COMMON

VCE = -0.2V

-0.1

-1

-10

-100

25

-1

-25

EMMITER COMMON

VCE = -0.2V

-0.1

-1

-10

-100

INPUT VOLTAGE VI(ON) ( V)

RN2103MFV

-100

COLLECTOR CURRENT IC (mA)

IC - VI(ON)

RN2104MFV

-100

IC - VI(ON)

COLLECTOR CURRENT IC (mA)

-10

Ta = 100°C

25

-1

-25

EMMITER COMMON

VCE = -0.2V

-0.1

-1

-10

-100

-10

Ta = 100°C

25

-1

-25

EMMITER COMMON

VCE = -0.2V

-0.1

-1

-10

-100

INPUT VOLTAGE VI(ON) ( V)

INPUT VOLTAGE

VI(ON) ( V)

RN2105MFV

-100

IC - VI(ON)

-100

RN2106MFV

IC - VI(ON)

COLLECTOR CURRENT IC (mA)

Ta = 100°C

-10

COLLECTOR CURRENT IC (mA)

Ta = 100°C

-10

25

-1

25

-1

-25

EMMITER COMMON

VCE = -0.2V

-25

EMMITER COMMON

VCE = -0.2V

-0.1

-1

-10

-100

-0.1

-1

-10

-100

INPUT VOLTAGE VI(ON) ( V)

INPUT VOLTAGE

VI(ON) ( V)

3

2010-04-06

RN2101MFV∼RN2106MFV

RN2101MFV

-10000

EMITTER

COMMON

VCE = -5 V

-1000

Ta = 100°C

25

-25

IC - VI (OFF)

-10000

RN2102MFV

IC - VI (OFF)

COLLECTOR CURRENT IC (μA)

-1000

Ta = 100°C

25

-25

-100

EMITTER

COMMON

VCE = -5V

-10

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-2

-10

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-2

INPUT VOLTAGE

VI (OFF) ( V)

INPUT VOLTAGE

VI (OFF) ( V)

RN2103MFV

-10000

EMITTER

COMMON

VCE = -5 V

-1000

IC - VI (OFF)

-10000

RN2104MFV

IC - VI (OFF)

COLLECTOR CURRENT IC (μA)

Ta = 100°C

25

-25

-1000

Ta = 100°C

25

-25

-100

EMITTER

COMMON

VCE = -5V

-10

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-2

-10

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-2

INPUT VOLTAGE

VI (OFF) ( V)

INPUT VOLTAGE VI (OFF) ( V)

RN2105MFV

-10000

IC - VI (OFF)

-10000

RN2106MFV

IC - VI (OFF)

COLLECTOR CURRENT IC (μA)

-1000

Ta = 100°C

25

-25

COLLECTOR CURRENT IC (μA)

EMITTER

COMMON

VCE = -5 V

-1000

Ta = 100°C

25

-25

-100

EMITTER

COMMON

VCE = -5V

-10

0

-0

-0.2

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-10

0

-0

-0.2 -0.4 -0.6 -0.8

-1

-1.2

INPUT VOLTAGE

VI (OFF) ( V)

-1.4

INPUT VOLTAGE VI (OFF) ( V)

4

2010-04-06

RN2101MFV∼RN2106MFV

RN2101MFV

1000

hFE - IC

1000

RN2102MFV

hFE - IC

DC CURRENT GAIN hFE

100

Ta = 100°C

25

-25

DC CURRENT GAIN hFE

Ta = 100°C

100

-25

25

10

EMITTER COMMON

VCE = -5 V

1

-1

-10

COLLECTOR CURRENT

IC (mA)

-100

EMITTER COMMON

VCE = -5 V

10

-1

-10

COLLECTOR CURRENT

IC (mA)

-100

RN2103MFV

RN2963FS

1000

hFE - IC

1000

RN2104MFV

hFE - IC

Ta = 100°C

DC CURRENT GAIN hFE

Ta = 100°C

25

100

-25

25

-25

100

EMITTER COMMON

VCE = -5 V

10

-1

-10

COLLECTOR CURRENT

IC (mA)

-100

EMITTER COMMON

VCE = -5 V

10

-1

-10

COLLECTOR CURRENT

IC (mA)

-100

1000

RN2105MFV

hFE - IC

1000

RN2106MFV

hFE - IC

Ta = 100°C

DC CURRENT GAIN hFE

Ta = 100°C

25

-25

100

25

100

-25

EMITTER COMMON

VCE = -5 V

10

-1

-10

COLLECTOR CURRENT

IC (mA)

-100

EMITTER COMMON

VCE = -5 V

10

-1

-10

COLLECTOR CURRENT IC (mA)

-100

5

2010-04-06

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