Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1803
DESCRIPTION
·With
TO-3PML package
·Complement
to type 2SC4688
APPLICATIONS
·Power
amplifier applications
·Recommend
for 40W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
·
Absolute maximum ratings(T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-5
-6
-12
-0.6
55
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE(sat)
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-5A;I
B
=-0.5 A
I
C
=-3A ; V
CE
=-5V
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
55
35
30
290
MIN
-80
TYP.
2SA1803
MAX
UNIT
V
-2.0
-1.5
-5
-5
160
V
V
μA
μA
MHz
pF
h
FE-1
classifications
R
55-110
O
80-160
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1803
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1803
4
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