PTB20074 datasheet, PDF - EEWORLD Datasheet

PTB20074: DescriptionRF Power Bipolar Transistor, L Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size62KB，2 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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RF Power Bipolar Transistor, L Band, Silicon, NPN

Parameter Name	Attribute value
Maker	Infineon
package instruction	FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	EMITTER
Maximum collector current (IC)	1.4 A
highest frequency band	L BAND
JESD-30 code	R-CDFM-F6
JESD-609 code	e3
Number of terminals	6
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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